ZnCdO/ZnO – a new heterosystem for green‐wavelength semiconductor lasing

Kalusniak, Sascha; Sadofev, Sergey; Puls, J.; Henneberger, F.

doi:10.1002/lpor.200810040

Cited by 67 publications

(46 citation statements)

References 28 publications

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“…Futhermore, the possibility of growing pseudobinary compounds with MgO and CdO allows bandgap tuning and heterostructure growth. In particular, ternary Cd x Zn 1 x O alloys allow band-gap engineering in a wide range that covers the UV-yellow spectral region [2]. However, ZnO and CdO have different crystalline structures, wurtzite and rock salt, respectively, being difficult to stabilize a wurtzite phase of Cd x Zn 1 x O, which frequently results in phase separation [7,8].…”

Section: Case Studiesmentioning

confidence: 99%

“…The Cd 0.16 Zn 0.84 O thin film (200 nm thick) was grown at T s = 130 o C and annealed at T A = 400 o C for 4 hours. The film was grown on a 500 nm thick MgZnO buffer layer at T s = 380 o C on a-plane sapphire, the former serves to reduce the lattice mismatch and prevent the propagation of defects from the sapphire to the Cd 0.16 Zn 0.84 O layer [2]. The structural characterization of these samples has been reported previously [14].…”

Section: Technical Detailsmentioning

confidence: 99%

“…PAC probes the charge density distribution in the surroundings of chosen radioactive nuclei, thus allowing characterizing the probe's real environment at the atomic scale. We have chosen to study ZnO and Cd x Zn 1 x O thin films -aimed to cover luminescence wavelengths from UV to yellow [2] -and the technologically relevant high -K factor Ga 2 O 3 nanostructures and Ga 2 O 3 pellets [3]. Both materials belong to the family of transparent conductive oxides and the used PAC probe, 111m Cd/ 111 Cd, is well suited to study the microscopic physical properties of these materials being an isoelectronic impurity in the case of ZnO and a possible ptype dopant in the case of Ga 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

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Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Barbosa

Gonçalves

Redondo-Cubero

et al. 2013

Physica Status Solidi (b)

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The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/CdxZn1−xO thin films and Ga2O3 powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of annealing temperature were performed after implantation of 111mCd/111Cd (T1/2 = 48 min) and later compared to density functional theory simulations. For ZnO, the substitution of Cd probes at Zn sites was observed, as well as the formation of a probe‐defect complex. The ternary CdxZn1−xO (x = 0.16) showed good macroscopic crystal quality but revealed some clustering of local defects around the probe Cd atoms, which could not be annealed. In the Ga2O3 samples, the substitution of the Cd probes in the octahedral Ga‐site was observed, demonstrating the potential of ion‐implantation for the doping of nanowires.

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Section: Case Studiesmentioning

confidence: 99%

Section: Technical Detailsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Barbosa

Gonçalves

Redondo-Cubero

et al. 2013

Physica Status Solidi (b)

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“…In principle, with ZnObased alloys, a similar spectral range can be covered as with the (Al,In,Ga)N heterosystem. Room temperature lasing of (Zn,Cd)O/ZnO quantum well (QW) structures was achieved from UV to green wavelengths [3]. In the strong coupling regime, ZnO was predicted to be even superior due to its high oscillator strength and exciton binding energy [4,5].…”

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confidence: 99%

Vertical cavity surface emitting laser action of an all monolithic ZnO-based microcavity

Kalusniak

Sadofev

Halm

et al. 2011

Applied Physics Letters

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We report on room temperature laser action of an all monolithic ZnO-based vertical cavity surface emitting laser (VCSEL) under optical pumping. The VCSEL structure consists of a 2λ microcavity containing 8 ZnO/Zn0.92Mg0.08O quantum wells embedded in epitaxially grown Zn0.92Mg0.08O/Zn0.65Mg0.35O distributed Bragg reflectors (DBRs). As a prerequisite, design and growth of high reflectivity DBRs based on ZnO and (Zn,Mg)O for optical devices operating in the ultraviolet and blue-green spectral range are discussed.Semiconductor lasers operating in the ultraviolet (UV) and blue spectral range have become of great technological importance, e.g., for data storage applications. Compared to the commonly employed edge-emitting devices, vertical cavity surface emitting lasers (VCSELs) offer several advantages such as single mode emission, a circular beam profile, and the possibility for integration into two dimensional arrays. VCSELs based on GaN and its alloys reached a promising stage of development [1] and laser devices working in the strong exciton-photon coupling regime, so called polariton lasers, have been demonstrated at room temperature [2]. In principle, with ZnObased alloys, a similar spectral range can be covered as with the (Al,In,Ga)N heterosystem. Room temperature lasing of (Zn,Cd)O/ZnO quantum well (QW) structures was achieved from UV to green wavelengths [3]. In the strong coupling regime, ZnO was predicted to be even superior due to its high oscillator strength and exciton binding energy [4,5]. However, necessary prerequisites to both VCSELs and polariton lasers are microcavities (MCs) with a high quality factor and good optical quality ZnO active layers. So far only hybrid MCs [6-9] consisting of, e.g., an epitaxially grown GaN-based bottom distributed Bragg reflector (DBR), a ZnO active layer, and a top dielectric DBR have been employed.In this letter, we report on the monolithic growth of ZnO and (Zn,Mg)O based DBRs and MCs by radicalsource molecular beam epitaxy (MBE). With a properly chosen DBR ternary alloy composition, it is possible to obtain high reflectivities with a moderate number of mirror pairs in the range from 375 nm to 500 nm. Finally, we demonstrate an UV emitting all-ZnO VCSEL.The samples are grown in a commercial DCA-450 MBE apparatus equipped with standard metal sources and a radical plasma cell for oxygen. A-plane (1120) sapphire wafers are used as substrates. The (Zn,Mg)O DBRs and MCs containing ZnO/(Zn,Mg)O QWs are grown without interruption at T g = 340 • C with an oxygen limited growth rate of 330 nm/h, which was previously determined from oscillations in the specular beam intensity of in situ reflected high-energy electron diffraction (RHEED) [3]. Note that the low T g allows for the growth

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“…The conventional type-I Zn 1-x Cd x O quantum well (QW) with ZnO barriers have gained considerable attention due to prospective applications in optoelectonics [1][2][3][4][5][6][7][8][9][10]. One of the major challenges that prevent high performance of ZnO/Zn 1-x Cd x O /ZnO QW is the large spontaneous and piezoelectric polarization in the QW, which induces the low electron and hole wave functions overlap, especially for QW with high cadmium content and thick QW active layer as well as the redshift in transition energy (well-known QCSE) [2,7].…”

Section: Introductionmentioning

confidence: 99%

Effect of Zn–Cd interdiffusion on the band structure and spontaneous emission of ZnO/Zn1−Cd O/ZnO quantum wells

Shtepliuk

Khranovskyy

Yakimova

2015

Superlattices and Microstructures

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ZnCdO/ZnO – a new heterosystem for green‐wavelength semiconductor lasing

Cited by 67 publications

References 28 publications

Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Vertical cavity surface emitting laser action of an all monolithic ZnO-based microcavity

Effect of Zn–Cd interdiffusion on the band structure and spontaneous emission of ZnO/Zn1−Cd O/ZnO quantum wells

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