ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy

Ogata, Kenichi; Koike, Kazuto; Tanite, T.; Komuro, T.; Yan, Fengyuan; Sasa, Shigehiko; Inoue, M.; Yano, Mitsuaki

doi:10.1109/mbe.2002.1037824

Cited by 5 publications

(6 citation statements)

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“…8. The additional peak (C 2 at $ 1310 eV) observed in the film with Mg fraction $ 0.66 occurs in Mg K-edge XANES from pure cubic MgO [32] and cubic Zn 1 À x Mg x O [33]. Therefore, the Mg K edge XANES from the thin films with Mg fractions o0.37 were produced solely by the wurtzite phase of Zn 1 À x Mg x O.…”

Section: Resultsmentioning

confidence: 94%

Structural characterisation of energetically deposited Zn 1−x Mg x O films

Mayes

McCulloch

Partridge

2015

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 94%

Structural characterisation of energetically deposited Zn 1−x Mg x O films

Mayes

McCulloch

Partridge

2015

Journal of Crystal Growth

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“…The samples with a high Mg concentration exhibit polycrystalline properties. The problem with the homogeneity of Zn 1−x Mg x O for higher Mg concentrations is repeatedly reported and is correlated with the fact that MgO crystallizes in a cubic structure instead of a hexagonal one [ 17 , 18 ]. The thermodynamic solubility limit of MgO in the wurtzite phase of the Zn 1−x Mg x O alloy was reported to be x = 0.04 in a bulk form [ 19 ] and the solubility limit is much higher for epitaxial thin films.…”

Section: Resultsmentioning

confidence: 99%

Polar and Non-Polar Zn1−xMgxO:Sb Grown by MBE

et al. 2022

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The article presents a systematic study of Sb-doped Zn1-xMgxO layers, with various concentrations of Mg, that were successfully grown by plasma-assisted MBE on polar a- and c- oriented and non-polar r-oriented sapphire substrates. X-ray diffraction confirmed the polar c-orientation of alloys grown on c-and a-oriented sapphire and non-polar structures grown on r-oriented substrates. A uniform depth distribution of the Sb dopant at level of 2 × 1020 cm−3 was determined by SIMS measurements. Raman spectroscopy revealed the presence of Sb-related modes in all samples. It also showed that Mg alloying reduces the compressive strain associated with Sb doping in ZnO. XPS analysis indicates that the chemical state of Sb atoms in ZnMgO is 3+, suggesting a substitutional position of SbZn, probably associated with two VZn vacancies. Luminescence and transmission spectra were measured to determine the band gaps of the Zn1-xMgxO layers. The band gap energies extracted from the transmittance measurements differ slightly for the a, c, and r substrate orientations, and the differences increase with increasing Mg content, despite identical growth conditions. The differences between the energy gaps, determined from transmission and PL peaks, are closely correlated with the Stokes shift and increase with the Mg content in the analyzed series of ZnMgO layers.

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“…Moreover, ZnO maintains lattice-matching to MgZnO film without doping other impurities, and improves the film surface quality [10]. ZnO has high exciton binding energy (60 meV) [11], so it can improve absorption of the film.…”

Section: Introductionmentioning

confidence: 99%