ZnSe thin films grown by chemical vapour deposition for application as buffer layer in CIGSS solar cells

Structural, optical properties and VCNR mechanisms in vacuum evaporated iodine doped ZnSe thin films

“…Among these, zinc selenide (ZnSe) material with a direct band gap of 2.7 eVat room temperature, have potential applications in the blue-green laser diodes [1], light emitting diodes [2] and solar cells [3]. ZnSe has either a cubic structure with lattice parameter a = 5.6688 Å or hexagonal structure with lattice parameters a = 3.820 Å and c = 6.626 Å [4].…”

Preparation and Characterization of ZnSe Film Synthesized by Chemical Co-reduction

“…The efficiency of the solar cell with Cu(In,Ga)(Se,S) 2 buffer layer prepared by chemical vapor deposition has reached 9.6% in 2000 [4]. The CIGSS/Zn(Se,OH) x heterojunction with conversion efficiency 13.6% was reported by A.Ennaoui et al in the same year [5].…”

Room temperature electrosynthesis of ZnSe thin films

“…solar cells, heterojunction LED, photoconductors, etc. Though Zinc selenide (ZnSe) has a direct wide band gap (2.7 eV) it is exceptionally interesting material for the applications like optoelectronics, especially for fabrication of the blue light diodes, also it acts as a buffer/window layer in chalcogenide-based thin film solar cells (by constructing a heterojunction under lattice matching conditions) [1][2][3].…”

“…There are several reports available on the growth of ZnSe thin films by various techniques such as chemical vapour deposition (CVD) [1], screen printing [4], vacuum evaporation [5,6], pulsed laser deposition (PLD) [7], chemical bath deposition (CBD) [8,9], etc. It has been identified that the deposition from aqueous solution makes the process simple, economical and easily scalable.…”