2002
DOI: 10.1063/1.1492013
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( Zr,Ti ) O 2 interface structure in ZrO2–TiO2 nanolaminates with ultrathin periodicity

Abstract: Phonon engineering in nanostructures: Controlling interfacial thermal resistance in multilayer-graphene/dielectric heterojunctions Appl. Phys. Lett. 101, 113111 (2012) Thermally induced interface chemistry in Mo/B4C/Si/B4C multilayered films J. Appl. Phys. 112, 054317 (2012) Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure

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Cited by 14 publications
(10 citation statements)
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“…Architecture B showed a major peak attributed to diffraction from the (11 1) planes of an extensive monoclinic (ZrTi)O 2 solid solution. This structure, reported in thin films in [58] for the first time, is isomorphic with m-TiO 2 , that naturally occurs in rocks [19,20], and m-ZrTiO 4 , that is produced by applying high hydrostatic pressure to orthorhombic ZrTiO 4 powder [21].…”
Section: Zro 2 -Tio 2 Nanolaminatesmentioning
confidence: 75%
“…Architecture B showed a major peak attributed to diffraction from the (11 1) planes of an extensive monoclinic (ZrTi)O 2 solid solution. This structure, reported in thin films in [58] for the first time, is isomorphic with m-TiO 2 , that naturally occurs in rocks [19,20], and m-ZrTiO 4 , that is produced by applying high hydrostatic pressure to orthorhombic ZrTiO 4 powder [21].…”
Section: Zro 2 -Tio 2 Nanolaminatesmentioning
confidence: 75%
“…Aita et al reported that a mixed interface is formed in a nanolaminate film and can affect the properties of the nanolaminate film. 17 Therefore, it can be concluded that the dielectric constant of nanolaminate films with thin sublayers is enhanced above the value calculated using the series model because of the formation of a mixture layer ͑Hf-O-Al͒ at the interface between the two sublayers and the dramatic increase of the number of mixture layers.…”
mentioning
confidence: 85%
“…Although (Zr,Ti)O 2 with ordered M-fergusonite structure was encountered as a quenched high-pressure phase, it is possible that it also forms at low pressures in very finegrained materials, such as those reacted by sol-gel annealing, ball milling, or thin film sputtering. For example, a monoclinic high-pressure form of ZrTiO 4 was found to form by thin film sputtering, probably stabilized by the Gibbs-Thompson effect [9].…”
Section: Discussionmentioning
confidence: 99%
“…Due to their electrical properties, most of these compounds are objects of thin-film and nano-laminate studies [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%