ZVS of Power MOSFETs Revisited

Kasper, Matthias; Burkart, Ralph M.; Deboy, G.; Kolar, Johann W.

doi:10.1109/tpel.2016.2574998

Cited by 296 publications

(146 citation statements)

References 9 publications

Supporting

Mentioning

145

Contrasting

Order By: Relevance

“…The negative current I R furthermore stores energy in inductor L1, which can be used to discharge the half bridge switching node between switches Q3 and Q4 prior to turning on Q4. Zero voltage switching can be achieved, if (10) It is noteworthy, that for zero voltage switching conditions in half bridge circuits the term Q oss *V DC needs to be considered and not the energy term E oss [22]. Referring to Fig.…”

Section: Drain-source Voltage Vds [V]mentioning

confidence: 99%

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

2017

View full text Add to dashboard Cite

Section: Drain-source Voltage Vds [V]mentioning

confidence: 99%

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

2017

View full text Add to dashboard Cite

“…The objective of this paper is at first to theoretically analyze how losses of SiC power devices change when blocking voltage reduces from 1200V to 600V and then experimentally compare switching losses of a commercial 1200V SiC-MOSFET (C2M0080120D, 1200V/36A), 650V SiC-MOSFET (SCT2120AF, 650V/29A) and 650V GaN-HEMT (GS66508P, 650V/30A) with similar current rating in different hard switching conditions, which would be helpful for engineers to choose wide bandgap power devices when designing power electronics systems. As shown in [6], [7], zero voltage switching (ZVS) is an efficient way to further reduce device switching losses, thus all the above devices are all evaluated in soft switching condition as well.…”

Section: Introductionmentioning

confidence: 99%

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions

Evans

Johnson

2016

2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

View full text Add to dashboard Cite

Abstract-SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half. After that, Esw of a 650V GaN-HEMT is measured in hard switching condition and is compared with that of a 1200V SiC-MOSFET and a 650V SiC-MOSFET with the same current rating, in which it is shown that Esw of a GaN-HEMT is smaller than a 1200V SiC-MOSFET, which is smaller than 650V SiC-MOSFET. Following by that, in order to reduce device turn-ON switching energy, a zero voltage switching circuit is used to evaluate all the devices. Device output capacitance stored energy Eoss are measured and turn-OFF switching losses are obtained by subtracting Eoss, which shows that GaN-HEMT is sill better than SiC device in terms of switching losses and 1200V SiC-MOSFET has smaller switching losses than 650V SiC-MOSFET.

show abstract

“…6b and 6d, inductor current waveform deviate from sine and rectified sine wave, which means that switching frequency is slightly higher than resonant frequency even under nominal load conditions. This is due to the fact that switching transitions from S 1 -S 3 to S 2 -S 4 and vice versa need to be started with certain amount of energy in resonant inductor in order to achieve ZVS [11]. Main equations of current waveforms for AC side inductor case are presented in [12].…”

Section: A Design Aspects and Optimization Resultsmentioning

confidence: 99%

900V SiC Based, Hybrid, Multilevel DC/DC Topology for 1500VDC PV Application

Stevanovic

Serrano

Vasić

et al. 2019

2019 IEEE Applied Power Electronics Conference and Exposition (APEC)

View full text Add to dashboard Cite

Very compact, highly efficient, hybrid DC/DC topology, consisted of a standard interleaved boost converter followed by a multilevel Resonant Switched Capacitor Converter (RSCC), that employs 900V Silicon-Carbide (SiC) devices, for use in emerging, two-stage, grid connected 1500V Photo-Voltaic (PV) systems is presented in this paper. Operation principle of this topology is described: controllability of its output voltage and power processing distribution among its stages in function of input voltage. Depending on operating region, certain amount of input power is not processed, but it is transfered directly to the output. This behaviour increases significantly efficiency of the analyzed topology, compared to the solutions presented in literature. The presented topology obtains full ZVS transitions in all operating conditions, even without load. ZVS transitions and employed SiC MOSFETs are the key elements for the high converter efficiency. Triangular Conduction Mode (TCM) in boost stage and resonant switching technique in RSCC part are used to obtain ZVS transitions in all the switches under wide range of loads and PV voltages. Results of multivariable optimization (pareto front) for the presented topology are provided. Previousely described theoretical analysis is fully experimentally confirmed by building and measuring a 10kW prototype of 8.26kW/kg of specific power and 404.6cm 3 of volume occupied only by power stage components. Euro efficiency of 99.48% in nominal input/output voltage conditions is achieved.

show abstract

ZVS of Power MOSFETs Revisited

Cited by 296 publications

References 9 publications

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

Perspective of Loss Mechanisms for Silicon and Wide Band-Gap Power Devices

SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions

900V SiC Based, Hybrid, Multilevel DC/DC Topology for 1500VDC PV Application

Contact Info

Product

Resources

About