β-Ga2O3 thin films on sapphire pre-seeded by homo-self-templated buffer layer for solar-blind UV photodetector

Liu, X.Z.; Guo, Pei; Sheng, T. Y.; Qian, L. X.; Zhang, W.L.; Li, Y.R.

doi:10.1016/j.optmat.2015.11.023

Cited by 122 publications

(46 citation statements)

References 22 publications

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“…[10][11][12][13][14][15] While the traditional molecular beam epitaxy (MBE) growth method can produce high quality Ga 2 O 3 materials, the challenge of slow growth rates still need to be addressed. 11,12 Among the limited efforts towards heteroepitaxy of b-Ga 2 O 3 thin films on foreign substrates, [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32] none has reported heteroepitaxial Ga 2 O 3 films with good electrical properties.…”

Section: Ultrawide Bandgap (Uwbg) Gallium Oxide (Ga 2 O 3 )mentioning

confidence: 99%

Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

Rafique

Han

Neal

et al. 2016

Applied Physics Letters

133

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This paper presents the heteroepitaxial growth of ultrawide bandgap b-Ga 2 O 3 thin films on c-plane sapphire substrates by low pressure chemical vapor deposition. N-type conductivity in silicon (Si)doped b-Ga 2 O 3 films grown on sapphire substrate is demonstrated. The thin films were synthesized using high purity metallic gallium (Ga) and oxygen (O 2) as precursors. The morphology, crystal quality, and properties of the as-grown thin films were characterized and analyzed by field emission scanning electron microscopy, X-ray diffraction, electron backscatter diffraction, photoluminescence and optical, photoluminescence excitation spectroscopy, and temperature dependent van der Pauw/Hall measurement. The optical bandgap is $4.76 eV, and room temperature electron mobility of 42.35 cm 2 /V s was measured for a Si-doped heteroepitaxial b-Ga 2 O 3 film with a doping concentration of 1.32 Â 10 18 cm À3 .

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Section: Ultrawide Bandgap (Uwbg) Gallium Oxide (Ga 2 O 3 )mentioning

confidence: 99%

Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

Rafique

Han

Neal

et al. 2016

Applied Physics Letters

133

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“…5 a. The rise time and decay time are 319 ms and 270 ms [ 40 , 41 ], respectively, much less than those of devices fabricated on epitaxial β-Ga 2 O 3 films or β-Ga 2 O 3 flakes [ 35 , 42 , 43 ] but longer than the data in [31]. For the existence of double heterojunction in [31], PEDOTT:PSS/Ga 2 O 3 upper junction and Ga 2 O 3 /p-Si lower junction, the photogenerated carriers can be separated more effectively by the double built-in electric fields than the only one PEDOTT:PSS/Ga 2 O 3 junction in this paper.…”

Section: Resultsmentioning

confidence: 99%

The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

et al. 2020

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In this paper, the hybrid β-Ga 2 O 3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ b increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga 2 O 3 interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of R 254 nm /R 400 nm up to 1.26 × 10 3 are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga 2 O 3 Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.

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“…Sapphire is fairly inexpensive and available in different-sized wafers but there are always a few layers of α-Ga 2 O 3 between a sapphire substrate and β-Ga 2 O 3 [55]. It has also been reported that there is dissimilarity between the corundum crystal structure of sapphire and the monoclinic structure of β-Ga 2 O 3 [56], but α-Ga 2 O 3 has a corundum structure, so it is better-matched [57].…”

Section: Aluminum Oxide (Al 2 O 3 )mentioning

confidence: 99%

Ga2O3 Nanowire Synthesis and Device Applications

Alhalaili¹,

Mao²,

Islam³

2018

Novel Nanomaterials - Synthesis and Applications

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In recent years, gallium oxide nanowires have been used in many scientific disciplines due to their outstanding and unique properties. Several applications have focused on incorporating gallium oxide nanowires in devices to improve their performance and efficiency. These distinctive structures bring new opportunities to several research fields and applications such as optoelectronics, electronics, and chemistry. This chapter provides a basic overview of gallium oxide's properties and the growth process of gallium oxide nanowires, with an emphasis on varied applications and future challenges.

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β-Ga2O3 thin films on sapphire pre-seeded by homo-self-templated buffer layer for solar-blind UV photodetector

Cited by 122 publications

References 22 publications

Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

Ga2O3 Nanowire Synthesis and Device Applications

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