Влияние потенциала рассеяния на радиационных дефектах на перенос носителей заряда в GaAs-структурах

Abstract

A numerical simulation of the charge carrier mobility change after radiation exposure in GaAs structures is performed. For each scattering potential under study, the values of model parameters are determined at which the calculation results are consistent with experimental data. It is demonstrated that differences in scattering potentials become significant in the case of studying overshoot space and time velocity effects.