Проведен анализ переноса электронов через тонкую базу гетеробиполярного транзистора на основе GaAs с учетом флуктуаций пространственного распределения кластеров радиационных дефектов при облучении потоком мгновенных нейтронов спектра деления. Теоретически показано, что однородное заполнение кластерами радиационных дефектов рабочей области приводит к минимальной деградации коэффициента усиления гетеробиполярного транзистора по постоянному току.

The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.

The formation of a disordered defect region in bulk silicon is simulated using the molecular-dynamics method for various energies of a primary recoil atom. Variations in the volume and number of radiation-induced defects in a cluster during its formation are calculated. The generation rates of nonequilibrium carriers and amplitude-temporal dependences of pulses of ionization currents in test Schottky diodes with hyperhigh frequencies are found theoretically.

A numerical simulation of the charge carrier mobility change after radiation exposure in GaAs structures is performed. For each scattering potential under study, the values of model parameters are determined at which the calculation results are consistent with experimental data. It is demonstrated that differences in scattering potentials become significant in the case of studying overshoot space and time velocity effects.

Проведен анализ влияния неравновесных процессов в полупроводниковых структурах при радиационном воздействии на характеристики структур и СВЧ-транзисторов на их основе. Особое внимание обращено на сопоставление параметров опытных (экспериментальных) и серийных структур и транзисторов на их основе до и после γ-нейтронного облучения.