The results of a study of the optical characteristics of non-classical light sources based on single In(Ga)As quantum dot grown on a (111)B GaAs substrate are presented. The single-photon nature of the radiation is confirmed by measuring and analyzing the second-order correlation function g(2)(τ), g(2)(0)=0.033 ± 0.027, and the degree of indistinguishability of sequentially emitted single photons is (41 ± 10 )%.

A theoretical analysis of transient ionization processes occurring in a low-barrier GaAs Mott diode under the influence of space radiation high energy charged particles and simulating pulsed laser radiation is carried out. The diode response to the As+ ion action with an energy of 200 MeV, corresponding to a linear energy transfer of 26 MeV cm2/mg, is compared with the response to the femtosecond pulses optical radiation action of various durations (10-1000 fs) and photon energies exceeding the GaAs band gap.

A theoretical analysis of the degradation of the current-voltage characteristic and transient ionization processes occurring in a low-barrier uncooled GaAs Mott diode under the action of heavy ions of outer space and laser pulses simulating them is carried out. The response of the diode to the action of an arsenic ion with an energy of 200 MeV, corresponding to a linear energy transfer of 26 MeV∙cm2/mg, is compared with the response to the action of femtosecond pulses of optical radiation with a duration of 10 fs with a wavelength of 870 nm and 670 nm.

The effect of a single radiation defects cluster formation on the characteristics of short-channel structures was studied. Estimates of the nuclear particle energy, capable of forming a cluster of radiation defects, causing a failure and modern silicon transistors failure with various channel sizes.