The formation of a disordered defect region in bulk silicon is simulated using the molecular-dynamics method for various energies of a primary recoil atom. Variations in the volume and number of radiation-induced defects in a cluster during its formation are calculated. The generation rates of nonequilibrium carriers and amplitude-temporal dependences of pulses of ionization currents in test Schottky diodes with hyperhigh frequencies are found theoretically.

A numerical simulation of the charge carrier mobility change after radiation exposure in GaAs structures is performed. For each scattering potential under study, the values of model parameters are determined at which the calculation results are consistent with experimental data. It is demonstrated that differences in scattering potentials become significant in the case of studying overshoot space and time velocity effects.