Радиационная Стойкость Источника Субтерагерцового Излучения Из Гетеродина На Генераторе На Диоде Ганна И Умножителя На Полупроводниковой Сверхрешетке

Abstract

The radiation resistance to gamma irradiation of various dose levels (0.5 kGy, 2 kGy, 10 kGy) of a subterahertz radiation source from a heterodyne on a Gunn diode and a GaAs / AlAs semiconductor superlattice multiplier was estimated. A measuring chamber for studying the radiation resistance of Gunn diodes has been developed and manufactured. The dependence of the output power on the frequency of a sub-terahertz radiation source before and after irradiation was evaluated analytically.