The radiation resistance to gamma irradiation of various dose levels (0.5 kGy, 2 kGy, 10 kGy) of a subterahertz radiation source from a heterodyne on a Gunn diode and a GaAs / AlAs semiconductor superlattice multiplier was estimated. A measuring chamber for studying the radiation resistance of Gunn diodes has been developed and manufactured. The dependence of the output power on the frequency of a sub-terahertz radiation source before and after irradiation was evaluated analytically.

The study of the radiation hardness of subterahertz radiation source from a Gunn diode oscillator and a multiplier, based on a semiconductor superlattice GaAs/AlAs was continued. The dependences of the output power on the frequency of a Gunn diode oscillator before and after neutron irradiation are experimentally measured. The dependence of the output power on the frequency of the source of subterahertz radiation to neutron radiation with fluences of 3.5·1012 cm-2, 2.85·1013 cm -2, 1014 cm -2 has been analytically estimated.

Приводятся результаты теоретического и экспериментального сравнения эффективности преобразования сигналов диодами на основе сверхрешеток с малым числом периодов (N-образная вольт-амперная характеристика) и перспективными умножительными гетеробарьерными диодами (варакторами) (вольт-фарадная характеристика параболического вида). Ключевые слова: диоды на основе сверхрешеток, нелинейная вольт-амперная характеристика, варактор, вольт-фарадная характеристика параболического вида, умножители частоты сигналов.