Сhalcogenide glassy semiconductors of the system As-Se-S doped by Te for X-ray imaging

Abstract

The polymer/ As-Se-S-Te structure for X-ray imaging has been investigated. The possibility of registering relief-phase images for radiation of “white” spectrum and λ=0,154 nm of Cu anode X-ray tube was shown

The structure polymer/As-Se-S doped by Bi for X-ray imaging

“…1b). As it was shown in [16][17], the conductivity of the semiconductor layer in the irradiated areas is higher due to the change in resistivity under irradiation. A relief-phase image of the registered object is being formed under the Coulomb interaction between positive charges on the surface of thermoplastic and negative charges in the semiconductor layer.…”

“…1a) and irradiated with X-ray or visible irradiation (6). The carrier is removed from the X-ray chamber after irradiation for the next step of image visualization [16][17]20]. After irradiation, the carrier is heated up to a viscous state of the thermoplastic layer (T=78 0 C) in the dark and charged for 2,5-3,2 s by use of high voltage (7,8 kV) corona charging (Fig.…”

“…After irradiation, the carrier is heated up to a viscous state of the thermoplastic layer (T=78 0 C) in the dark and charged for 2,5-3,2 s by use of high voltage (7,8 kV) corona charging (Fig. 1b) [16][17]. The surface of the thermoplastic layer is charged with positive air ions (Fig.…”

“…The polymer/As-Se-S-Sn structure to be used for X-ray imaging is presented in [16], showing the As-Se-S-Sn system X-ray sensitivity (λ=0,154 nm). The same studies were care out for the polymer/ As-Se-S-Te structure in [17]. This work aimed the investigations on Bi-doped As-Se-S chalcogenide glassy semiconductors for X-ray imaging applications.…”

Synthesis and optical properties of the glassy compound As0.63S2.70Sb1.37Te0.30

“…[1]. They are beginning to be widely applied in optoelectronics as infrared optical elements, as materials for image creation and holographic information storage, acousto-optical elements, optical memory switches [2,3], X-ray imaging [4] etc. These materials are less affected by temperature because they have a low level of phonons and have heavy anions.…”