Transparent conducting Al‐doped and Ga‐doped ZnO thin films (so‐called AZO and GZO, respectively) have been grown on glass substrates by dc magnetron sputtering under identical growth conditions. The thermal stability and the damp heat stability of AZO and GZO thin films deposited at room temperature (RT) as well as 250 °C were investigated for hi‐tech applications in thin‐film solar cells and displays. AZO and GZO thin films grown at 250 °C have showed much greater stability to air and damp heat treatments than thin films deposited at RT. At growth temperature of 250 °C, however, it was shown that GZO thin films resistivity to various treatments was significantly more stable than one for AZO thin films. The mechanism of the charge carrier transport in doped ZnO conducting thin films has been proposed. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Magnetoresistance and Hall effect measurements in the narrow band gap semiconductor platinum antimonide, were made in pulsed magnetic fields from 10 to 200 kG at temperatures 2, 4.2, 77, and 300 °K. Quantum oscillations of magnetoresistance were observed at 2 and 4.2 °K. The experimental results compared with theory show that the valence band of PtSb2 is not spherical. As the Hall coefficient of PtSb2 is magnetic field‐independent it is possible to use PtSb2 samples in measurements of high magnetic fields at different temperatures.

The electrical conductivity, Hall effect, Nernst‐Ettingshausen effect, thermoelectric power, and thermal conductivity of a narrow band gap semiconductor, platinum antimonide single crystals, have been investigated over a wide temperature range. On the basis of these measurements it was possible to calculate mobilities and effective masses of electrons and holes and their concentrations in the intrinsic region. It is shown that the mobility ratio μn/μp < 1 and that the effective mass of holes is less than that of electrons.

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