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Temperature and package stress induced errors pose a challenging obstacle for improving accuracy of strainbased resonant pressure sensors. This paper presents a multiple sensor solution where three resonators were built under a shared pressure sensor diaphragm. By manipulating the anchoring scheme and the location of the resonators, temperature and stress signals can be independently captured and used to compensate for the errors in the pressure signal. After compensation, the pressure sensor showed a 20x reduction in temperature dependency and a 2x reduction in stress dependency.

The fatigue lifetime of single crystal silicon (SCS) was characterized in an environment free of oxygen, humidity, and organics. Long-term (>10 10 Hz) fatigue experiments performed with smooth-walled SCS devices showed no signs of fatigue damage up to 7.5 GPa. In contrast, experiments using SCS devices with a silicon dioxide (SiO 2 ) coating and rough sidewalls due to scalloping from deep reactive ion etching exhibited fatigue drift at 2.7 GPa and suffered from short-term (< 10 10 Hz) fatigue failure at stress levels >3 GPa. In these SCS-SiO 2 experiments, the initiation of fracture occurs in the SiO 2 layer. It is concluded that fatigue in this case is likely attributed to a subcritical cracking mechanism; not reactionlayer nor dislocation related. A cross-comparison with other works from literature is developed to show that packaging a pristine device in an inert environment is necessary in order to operate devices at high-stress levels.[2013-0267]

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