-This paper presents packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads for frequency tuning at mm-wave frequencies. The developed technique provides easy optimization to maximize the RF performance at the desired frequency without having an effect on the switch mechanics. Insertion loss less than 0.25 dB and isolation better than 20 dB are achieved from 30 to 100 GHz. A glass cap with a silicon frame is used to package the switch. Single-pole-double-throw (SPDT) switches and a 24 -77 GHz reconfigurable LNA is also demonstrated as a first time implementation of single chip BiCMOS reconfigurable circuit at such high frequencies.

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This paper presents a low-cost, low-loss solution for IC-to-board interconnects using bond wires. With an L-C-L structure to compensate the influence of bond wires, low insertion loss and high return loss can be achieved. Optimized at 60 GHz, an insertion loss of 0.1 dB is achieved for the differential connection and 0.3 dB is achieved for the single-ended connection, with additional radial stubs to compensate the influence of the ground bond wire.

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