Low-loss, low-cost, IC-to-board bondwire interconnects for millimeter-wave applications

Liu, G.; Trasser, Andreas; Ulusoy, A C; Schumacher, Hermann

doi:10.1109/mwsym.2011.5972629

Cited by 15 publications

(6 citation statements)

References 2 publications

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“…Valenta et al 13 investigated compensation methods of bonding wires used in differential chip‐to‐antenna and single‐ended chip‐to‐chip interfaces. Liu et al 14 presented a low‐cost, low‐loss solution for IC‐to‐board bonding wire interconnects using LCL compensation structure.…”

Section: Introductionmentioning

confidence: 99%

Investigation of impedance compensation in radio frequency circuits with bonding wire

Wang

Gao

Flowers

et al. 2022

Int J RF Mic Comp-Aid Eng

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Bonding wires are extensively used to provide electrical interconnections in communication systems. From the perspective of circuit analysis, the effects of such elements are often treated as an inductance. Bonding wires may cause inductive impedance discontinuity, which negatively impacts signal integrity. In this work, an impedance compensation technique using a chip capacitor was introduced. The electrical performance was improved significantly in the frequency band below 4 GHz. In order to expand the operating frequency of the circuit, another compensation approach based on adding a ground conductor was also studied. This compensation strategy is shown to be effective for frequencies up to 18 GHz. The results obtained from the model simulation for both strategies were also validated experimentally. The model simulation results for both approaches show good agreement with those obtained from the experimental measurements.

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Section: Introductionmentioning

confidence: 99%

Investigation of impedance compensation in radio frequency circuits with bonding wire

Wang

Gao

Flowers

et al. 2022

Int J RF Mic Comp-Aid Eng

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“…The self-resonance frequency of the bondwire is also not mentioned. [18] and [23] proposed a new L-C-L structure to compensate for the bondwire influence. This design has the potential to achieve wideband interconnect above 100 GHz, but extra matching wires have to be used.…”

Section: Introductionmentioning

confidence: 99%

A Flip-Chip Packaging Design With Waveguide Output on Single-Layer Alumina Board for E-Band Applications

Zhang

Zhao

Reynaert

2016

IEEE Trans. Microwave Theory Techn.

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This paper presents a millimeter-wave packaging design for E-band long-haul point-to-point communications. A broadband flip-chip interconnect with standard 75 µm pad pitch is developed on alumina substrate. To meet the application requirement, a microstrip line to WR-12 waveguide transition is proposed. The transition has no back-short cavity or modified waveguide involved. A back-to-back transition measurement is conducted to characterize the performance. Results show that the working bandwidth is from 69.5 to 87 GHz and the insertion loss at 77 GHz is less than 0.5 dB. A 40-nm CMOS power amplifier is packaged and measured with the proposed packaging design. The entire packaging loss is only 2.5 dB from pads to waveguide, including the loss of a 10 mm microstrip line. The simulated and measured results are in good agreement. The gain and peak output power are 13.4 dB and 17.6 dBm. The silicon temperature is measured as 44.4 • C after saturated output for 30 minutes. The performance is close to probe measurement after deembedding the packaging loss. Comparison between bondwire and flip-chip packaging is discussed and both are verified in millimeter-wave packaging design.

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“…Performance degradation of chip-to-antenna interconnects at higher frequencies has been, however, identified as one of the key challenges due to reactive discontinuity introduced by the bondwire. Nonetheless, several studies have shown that bondwire interconnects with excellent properties in the mmwave range are possible and reproducible [9]- [11]. Flip-chip interconnects are another alternative, however, the overall complexity of the mounting process and other inherent drawbacks of this technique such as dielectric detuning by the opposite substrate [7], [8], lack of direct visual control or worse heat sinking make this solution less attractive for mmwave interconnects.…”

Section: Introductionmentioning

confidence: 99%

Experimental evaluation of differential chip-to-antenna bondwire interconnects above 110 GHz

Valenta

Spreng

Ziegler

et al. 2014

2014 44th European Microwave Conference

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Bondwire interconnects for differential chip-toantenna interfaces are investigated. Two different compensation structures for different interconnect lengths are designed and evaluated using dedicated transmit and receive BiCMOS modules operating across a 110 to 156 GHz band. Measurement results demonstrate that a 9 GHz bandwidth and a minimum insertion loss of 0.2 dB can be achieved for interconnects as long as 0.8 mm, showing that the well established wire-bonding techniques are still an attractive solution even beyond 100 GHz. Reproducibility of the proposed solution is assessed as well.

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Low-loss, low-cost, IC-to-board bondwire interconnects for millimeter-wave applications

Cited by 15 publications

References 2 publications

Investigation of impedance compensation in radio frequency circuits with bonding wire

Investigation of impedance compensation in radio frequency circuits with bonding wire

A Flip-Chip Packaging Design With Waveguide Output on Single-Layer Alumina Board for E-Band Applications

Experimental evaluation of differential chip-to-antenna bondwire interconnects above 110 GHz

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