We experimentally demonstrate the first midinfrared (mid-IR) resonant magnetic nanostructures exhibiting a strong magnetic response corresponding to a negative permeability. This result is an important step toward the achievement of a negative refractive index in the IR. The possibility of extending negative permeability to higher frequencies is discussed; a structure with a negative effective permeability at a near-IR resonance frequency of 230 THz (1.3 microm) is proposed.

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Influence of the photodepoling parameters on quasiphase-matched second-harmonic generation and optical parametric fluorescence in polymer channel waveguides J. Appl. Phys. 96, 7112 (2004); 10.1063/1.1809770Quasi-phase matched second-harmonic generation in an Al x Ga 1−x As asymmetric quantum-well waveguide using ion-implantation-enhanced intermixing

This article describes defect reduction mechanisms that are active during the growth of GaN by nanoheteroepitaxy on (0001) 6H SiC. Nanoheteroepitaxial (NHE) and planar GaN epitaxial films were grown and compared using transmission electron microscopy, photoluminescence, x-ray diffraction, and time resolved photoluminescence. It was found that in addition to the previously reported defect reduction mechanism that results from the high compliance of nanoscale nuclei, other independent defect reduction mechanisms are also active during NHE including: (i) filtering of substrate defects, (ii) improved coalescence at the nanoscale, and (iii) defect termination at local free surfaces. Also, it was found that the biaxial strain in the GaN film could be significantly reduced by using a “grouped” NHE pattern geometry. Time resolved photoluminescence measurements on NHE GaN samples with this geometry showed a more than tenfold increase in carrier lifetime compared to GaN grown on planar SiC.

Fabrication of sub-100-nm metal-oxide-semiconductor field-effect transistors with asymmetrical source/drain using I-line double patterning technique