Interferometric lithography is used to create 3D periodic photoresist structures that are then converted to carbon electrodes via pyrolysis (see image). The porous electrodes contain five patterned layers and engineered structures covering seven orders of magnitude in size scale. The electrochemical deposition of 1–3‐nm gold nanoparticles and catalytic activity towards methanol oxidation following electroless palladium deposition is demonstrated.

Articles you may be interested inEvanescent-coupled antireflection coatings for hyper-numerical aperture immersion lithography J. Vac. Sci. Technol. B 32, 06FE03 (2014); 10.1116/1.4900726 Block copolymer self assembly for design and vapor-phase synthesis of nanostructured antireflective surfaces J. Vac. Sci. Technol. B 32, 06FE02 (2014); 10.1116/1.4896335Femtosecond laser direct hard mask writing for selective facile micron-scale inverted-pyramid patterning of silicon Appl.An integration scheme of block copolymer directed assembly with 193 nm immersion lithography is presented. It is experimentally shown that a thin silicon nitride film can be used as an antireflective coating ͑ARC͒. With such an ARC, directed assembly of a block copolymer ͑BCP͒ to triple the feature density of a chemical pattern was demonstrated. A high quality of assembly was obtained over a large area, and pattern transfer feasibility was illustrated. The integration of feature density multiplication via directed assembly of a BCP with 193 nm immersion lithography provided a pattern quality that was comparable with existing double patterning techniques, suggesting that the process could be a promising candidate for extending the use of current 193 immersion lithography tools to higher pattern densities.

Fabrication of sub-100-nm metal-oxide-semiconductor field-effect transistors with asymmetrical source/drain using I-line double patterning technique

Articles you may be interested inNumeric analysis of the role of liquid phase ultraviolet photochemistry in 193 nm immersion lithography Liquid immersion lithography (LIL) extends the resolution of optical lithography to meet industry demands into the next decade. Through the use of exposure media such as purified water (n of 1.44 at 193 nm), it is possible to reduce minimum pitches compared with traditional air/vacuum exposures media by a factor of as much as 44%-a full technology node. Beyond this simple observation, there is a good deal of work necessary to fully understand the impact of LIL immersion lithography on a lithography processes. This article addresses the impact of water immersion on the imaging capabilities of different resist formulations. All resists were evaluated by imaging dense line-space structures at a 65-nm half-pitch both in air and with water immersion. Studies of dense 65-nm lines made by immersion imaging in HPLC grade water with controlled variations in resist components were performed. Significant differences were observed and will be discussed.

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