The features of photovoltaic cells with their own photoconductivity in semiconductors with deep-level multiply-charge impurity have been considered. The use of such structures can significantly extend the dynamic range of sensitivity and gain new functional properties of single-element photoelectric receivers. Photovoltaic converters based on semiconductors with deep-level multiply-charge acceptor type impurity enable devices with a wider functionality, whereas the structure with multiply-charge donor type impurity has better linearity of energy performance. In the development of photoelectric receiver with advanced functionality features the model of recombination processes in multiply-charge impurity in a wide range of optical radiation power density has been used. Streszczenie. W pracy przedstawiono właściwości fotoelektrycznych przetworników z samoistną foto przewodnością na bazie półprzewodników z głęboką wieloładunkową domieszką. Wykorzystanie takich struktur pozwala w sposób istotny rozszerzyć zakres dynamicznej czułości i otrzymać nowe funkcjonalne właściwości fotodetektorów. Przetworniki fotoelektryczne na bazie półprzewodników z głęboką wieloładunkową domieszką typu akceptorowego pozwalją zbudować urządzenia o szerszej funkcjonalności, a struktury z wieloładunkową domieszką typu donorowego mają lepszą liniowość charakterystyki energetycznej. Przy projektowaniu foto odbiorników z rozszerzonymi funkcjonalnymi możliwościami wykorzystano model rekombinacyjnych procesów na wieloładunkowej domieszce w szerokiej skali gęstości mocy promieniowania optycznego. (Kontrolowanie charakterystyk przetworników fotowoltaicznych w oparciu o półprzewodniki

Modern measuring transducers for optical diagnostic system should perform automatic parameter estimation of optical signal and automatic switching between different energetic and optical sensitivity ranges. Traditional solution of this problem lies in the field of multi-sensory systems, complex optical schemes and complex signal processing algorithms. The paper aims at the development of new measuring transducers for optical diagnostic system on a basis of multifunctional unitary photovoltaic converters built on semiconductors with low-concentration deep dopants that form multiple energy levels for different charge states in the band gap. Relative complexity of physical processes accompanying the recharge of several energy levels of multiply-charged deep dopant makes it possible to realize the multifunctionality of a photoelectric converter albeit simple sensor design.The proposed unitary photovoltaic converters proved to have extended functional characteristics and increased ranges of energetic characteristic (by dozens dB) and spectral sensitivity characteristic with possible shifts of red margin by 2 to 4 μm in the spectral sensitivity range of 1–10 μm. Energetic and spectral sensitivity characteristic ranges could be switched either by measurement signal itself or by additional control inputs. Possible materials for resistive or barrier photovoltaic converter structure are Germanium, Silicon, А3В5 systems and other semiconductors including that compatible with «non-silicon» technologies and structures on sapphire substrate.

Nowadays the technique of analog contact potential difference probes well developed. Due to the influence of various parasitic factors, analog probes has substantial errors. The integration time for automatic CPD compensation should be at least several seconds to achieve high accuracy measurements. The speed and the accuracy are essential, for example, for Scanning Kelvin Probes. The purpose of this paper is to develop a digital contact potential difference probe, with a higher accuracy and speed of measurements as compared to analog probe. The digital probe made on base of 32-bit microprocessor with a Cortex M4 core. Measuring cycle consists of at least two successive determinations of the output signal amplitude at different compensation voltage generated by the microcontroller. It allows synchronizing of the generated oscillations and reading of the measuring signals. Data arrays processed in real time of the Digital Signal Processing by microprocessor. In this case is possible computation of the root mean square value or determination of the desired spectral line of the signal after fast Fourier transformation. Both methods permit eliminate of random noise and spurious harmonics. The method provides the digital contact potential difference probe operation in large signal mode and with a large signal/noise ratio. This eliminates the error associated with the zero signal finding. Also the integration time for automatic CPD compensation of the measured value is not necessary, which significantly reduces the measurement time and eliminates errors of compensation and DAC. In addition, the microcontroller could control the movement of the probe during scanning and transfer data to the host computer on interface USB, etc.

Introduction of submicron design standards into microelectronic industry and a decrease of the gate dielectric thickness raise the importance of the analysis of microinhomogeneities in the silicon-silicon dioxide system. However, there is very little to no information on practical implementation of probe electrometry methods, and particularly scanning Kelvin probe method, in the interoperational control of real semiconductor manufacturing process. The purpose of the study was the development of methods for nondestructive testing of semiconductor wafers based on the determination of electrophysical properties of the silicon-silicon dioxide interface and their spatial distribution over wafer’s surface using non-contact probe electrometry methods.Traditional C-V curve analysis and scanning Kelvin probe method were used to characterize silicon- silicon dioxide interface. The samples under testing were silicon wafers of KEF 4.5 and KDB 12 type (orientation <100>, diameter 100 mm).Probe electrometry results revealed uniform spatial distribution of wafer’s surface potential after its preliminary rapid thermal treatment. Silicon-silicon dioxide electric potential values were also higher after treatment than before it. This potential growth correlates with the drop in interface charge density. At the same time local changes in surface potential indicate changes in surface layer structure.Probe electrometry results qualitatively reflect changes of interface charge density in silicon-silicon dioxide structure during its technological treatment. Inhomogeneities of surface potential distribution reflect inhomogeneity of damaged layer thickness and can be used as a means for localization of interface treatment defects.