At present for analysis of the homogeneity of materials properties are becoming widely used various modifications of a scanning Kelvin probe. These methods allow mapping the spatial distribution of the electrostatic potential. Analysis of the electropotential profile is not sufficient to describe any specific physical parameters of the polymer nanocomposites. Therefore, we use an external energy impact, such as light. Purpose of paper is the modification of the Kelvin scanning probe and the conduct of experimental studies of the spatial distribution and response of the electrostatic potential of the actual polymer nanocomposites to the optical probing.Carried out the investigations on experimental Low density polyethylene composites. Carbon nanomaterials and nanoparticles of silicon dioxide or aluminum as fillers are used. As a result, maps of the spatial distribution of the electrostatic potential relative values and the surface photovoltage. Statistical analysis of the electrophysical and photoelectric properties homogeneity, depending on the component composition of the composites carried out. In addition, with reference to matrix polymers, the Kelvin scanning probe, in combination with the optical probing, made it possible to detect a piezoelectric effect. The latter, can used as a basis for the development of new methods for studying the mechanical properties of matrix polymers.

The features of photovoltaic cells with their own photoconductivity in semiconductors with deep-level multiply-charge impurity have been considered. The use of such structures can significantly extend the dynamic range of sensitivity and gain new functional properties of single-element photoelectric receivers. Photovoltaic converters based on semiconductors with deep-level multiply-charge acceptor type impurity enable devices with a wider functionality, whereas the structure with multiply-charge donor type impurity has better linearity of energy performance. In the development of photoelectric receiver with advanced functionality features the model of recombination processes in multiply-charge impurity in a wide range of optical radiation power density has been used. Streszczenie. W pracy przedstawiono właściwości fotoelektrycznych przetworników z samoistną foto przewodnością na bazie półprzewodników z głęboką wieloładunkową domieszką. Wykorzystanie takich struktur pozwala w sposób istotny rozszerzyć zakres dynamicznej czułości i otrzymać nowe funkcjonalne właściwości fotodetektorów. Przetworniki fotoelektryczne na bazie półprzewodników z głęboką wieloładunkową domieszką typu akceptorowego pozwalją zbudować urządzenia o szerszej funkcjonalności, a struktury z wieloładunkową domieszką typu donorowego mają lepszą liniowość charakterystyki energetycznej. Przy projektowaniu foto odbiorników z rozszerzonymi funkcjonalnymi możliwościami wykorzystano model rekombinacyjnych procesów na wieloładunkowej domieszce w szerokiej skali gęstości mocy promieniowania optycznego. (Kontrolowanie charakterystyk przetworników fotowoltaicznych w oparciu o półprzewodniki

Modern measuring transducers for optical diagnostic system should perform automatic parameter estimation of optical signal and automatic switching between different energetic and optical sensitivity ranges. Traditional solution of this problem lies in the field of multi-sensory systems, complex optical schemes and complex signal processing algorithms. The paper aims at the development of new measuring transducers for optical diagnostic system on a basis of multifunctional unitary photovoltaic converters built on semiconductors with low-concentration deep dopants that form multiple energy levels for different charge states in the band gap. Relative complexity of physical processes accompanying the recharge of several energy levels of multiply-charged deep dopant makes it possible to realize the multifunctionality of a photoelectric converter albeit simple sensor design.The proposed unitary photovoltaic converters proved to have extended functional characteristics and increased ranges of energetic characteristic (by dozens dB) and spectral sensitivity characteristic with possible shifts of red margin by 2 to 4 μm in the spectral sensitivity range of 1–10 μm. Energetic and spectral sensitivity characteristic ranges could be switched either by measurement signal itself or by additional control inputs. Possible materials for resistive or barrier photovoltaic converter structure are Germanium, Silicon, А3В5 systems and other semiconductors including that compatible with «non-silicon» technologies and structures on sapphire substrate.

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