Influence of Rapid Thermal Treatment of Initial Silicon Wafers on the Electrophysical Properties of Silicon Dioxide Obtained by Pyrogenous Oxidation

Пилипенко, В. А.; Solodukha, V. A.; Жарин, А. Л.; Gusev, O. K.; Vorobey, R. I.; Pantsialeyeu, K. U.; Tyavlovsky, A. K.; Tyavlovsky, K. L.; Bondariev, Vitalii

doi:10.1615/hightempmatproc.2019031122

Cited by 3 publications

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“…The most promising method for non-contact and non-destructive measurement of surface electrostatic potential at micro-and macroscopic scales is the Scanning Kelvin Probe (SKP). Traditionally, this method is used to investigate the surface of metals and semiconductors [11][12][13]15]. It determines the work function of the investigated metal surface by measuring the contact potential difference (CPD) between the sample's surface and the reference electrode.…”

Section: Introductionmentioning

confidence: 99%

Digital Contact Potential Probe in Studying the Deformation of Dielectric Materials

Pantsialeyeu

Жарин

Gusev

et al. 2020

IAPGOS

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The paper reviews the results of a study on the surface electrostatic charges of dielectrics obtained using the contact potential difference (CPD) technique. Initially, the CPD technique was only applied to the study of metal and semiconductor surfaces. The conventional CPD measurement technique requires full compensation of the measured potential that, in the case of dielectrics, could reach very high values. Such high potentials are hard to compensate. Therefore, the conventional CPD method is rarely applied in the study of dielectric materials. Some important improvements recently made to the CPD measurement technique removed the need for compensation. The new method, which does not require compensation, has been implemented in the form of a digital Kelvin probe. The paper describes the principles of the non-compensation CPD measurement technique which was developed for mapping the electrostatic surface charge space distribution across a wide range of potential values. The study was performed on polymers such as low-density polyethylene (LDPE) and polytetrafluoroethylene (PTFE).

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Section: Introductionmentioning

confidence: 99%

Digital Contact Potential Probe in Studying the Deformation of Dielectric Materials

Pantsialeyeu

Жарин

Gusev

et al. 2020

IAPGOS

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Charge-Sensitive Technique for Deformation Processes’ Study

Pantsialeyeu

Mikitsevich

Svistun

et al. 2022

Prib. metody izmer.

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Surface charge can be used as an information parameter about the change in the state of the material under the action of mechanical stresses. The aim of the work was to develop methods for studying deformation processes in metallic and polymeric materials using a charge-sensitive method.Experimental studies of deformation processes under tensile, compressive and impact loads were carried out on samples of various materials: aluminum alloy of AMg2 grade, steel of grade 08PS, high-pressure polyethylene of grade 12203-250 and samples of composite materials based on it, F4 polytetrafluoroethylene. As a research method, the analysis of changes in the relative values of the surface electron work function in the case of metals and the surface electrostatic potential in the case of polymers and composite materials is used. A scanning modification of a charge-sensitive probe is used as a measuring instrument.The results of experimental studies of materials in a stress-strain state demonstrate the high efficiency of the proposed method. The research methodology makes it possible to detect local changes in the surface potential of the material in the area of deformations, which are not detected on a macroscopic scale using standard methods. The results obtained can serve as a basis for the development of new methods and techniques for studying the mechanical properties of both metals and dielectric materials.

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Impact Produced by Recrystallization of Mechanically Destroyed Layer on Planar Side of Silicon Wafer Upon Electrical Parameters of CMOS Microcircuits

Pilipenka,

Saladukha,

Siarheichyk

et al. 2024

Doklady Belorusskogo gosudarstvennogo universiteta informatiki

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The influence of recrystallization of a mechanically damaged layer on the working side of a silicon wafer using rapid heat treatment (1000 °C, 20 s) on the electrical parameters of complementary metal-oxide-semiconductor microcircuits has been established. The analyzed characteristics of n- and p-channel transistors were selected: drain current from the gate voltage when diode-connected; output characteristics at various gate voltages; drain current from the drain voltage without applying potential to the gate; percentage of yield of suitable products. These parameters were compared with microcircuits manufactured using standard technology. Analysis of the results showed that rapid thermal treatment of the original silicon wafers can significantly improve the above characteristics of n-channel metal-oxide-semiconductor ( n-MOS) and p-channel metal-oxide-semiconductor (p-MOS) transistors by reducing the fixed charge in gate dielectric obtained by pyrogenic oxidation of silicon. This makes it possible to improve the quality of manufactured complementary metal-oxide-semiconductor microcircuits and increase the percentage of yield of suitable products from 74.38 to 77.53 %.

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Influence of Rapid Thermal Treatment of Initial Silicon Wafers on the Electrophysical Properties of Silicon Dioxide Obtained by Pyrogenous Oxidation

Cited by 3 publications

References 0 publications

Digital Contact Potential Probe in Studying the Deformation of Dielectric Materials

Digital Contact Potential Probe in Studying the Deformation of Dielectric Materials

Charge-Sensitive Technique for Deformation Processes’ Study

Impact Produced by Recrystallization of Mechanically Destroyed Layer on Planar Side of Silicon Wafer Upon Electrical Parameters of CMOS Microcircuits

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