We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current–voltage characteristics indicate a multiplication of >25. Experiment indicates and simulation verifies that the magnitude of the electric field at the onset of avalanche gain is ⩾3 MV/cm. Small-area devices exhibit stable gain with no evidence of microplasmas.
Studying the behavioral aspects of the individual decision-making process is important in identifying and addressing barriers in the adoption of residential solar photovoltaic (PV). However, there is little systematic research focusing on these aspects of residential PV in Texas, an important, large, populous state, with a range of challenges in the electricity sector including increasing demand, shrinking reserve margins, constrained water supply, and challenging emissions reduction targets under proposed federal regulations. This paper aims to address this gap through an empirical investigation of a new survey-based dataset collected in Texas on solar energy perceptions and behavior. The results of this analysis offer insights into the perceptions and motivations influencing intentions and behavior toward solar energy in a relatively untapped market and help identify information gaps that could be targeted to alleviate key barriers to adopting solar, thereby enabling significant emissions reductions in the residential sector in Texas.
We report the improved detectivity of AlxGa1−xN-based solar-blind p–i–n photodiodes with high zero-bias external quantum efficiency. The zero-bias external quantum efficiency was ∼42% at 269 nm, and increased to ∼46% at a reverse bias of −5 V. In addition, the photodiodes exhibited a low dark current density of 8.2×10−11 A/cm2 at a reverse bias of −5 V, which resulted in a large differential resistance. The high quantum efficiency and large differential resistance combine to yield a high detectivity of D*∼2.0×1014 cm Hz1/2 W−1. These results are attributed to the use of an Al0.6Ga0.4N window n region, which allows improved transmission to the absorption region, and to improved material quality.
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