A mode1 to study the perf01 tilance of a Metal-] tisuI~tor-Serriiconductc~lwith intlixed inversion layer (MIWIL) solar cells as the Al/huinel-oxitJ.e/p-Si structure was developedThe solutioti iricluded the effect of cliange in cell parameters namely: doping concentration, r>xkIe thickness, mobile charge density and metal work furiclion. It also included the dependence on the mobile charge density and fixed oxide charge deiisity A back bias applied between substrate and nielal itiversion grid \\/a? added to the solution It was found out that the efficiency is sensitive to change ill exteinal tmck bias Optimization of efficiency was sought in the range, when O

Inversion layer silicon solar cells are described, They employ the natural inversion layer occuning at the surface of thermally oxidized p-type silicon as one side of an inducedn-p junction. A computer analysis of induced inversion layer MIS silicon solar cell is described. The analysis simultaneously solves transport equations of the device in one dimension and provided thecurrent components. Taking into consideration all the cell parameters has yield more accurate values for cell performance. The study of the performance of the MIS/IL solar cells is based on the concept that there are minority carrier non-equilibrwn devices. In this paper, we discuss the effects of metal properties, namely, electron negativity and metal work fkction on cell characteristics. The model is used to obtain the optimum metal properties for high efficiency MIS/IL solar cells.

This paper is devoted to achieve a minimum dark current for both single and multiple quantum well solar cells. This minimization will increase the fill factor of the device and improve the overall efficiency. The study is performed using a self-consistent model. The model is based on the solution of semiconductor transport equations in the bulk regions and the solution of Schrödinger equation to model the absorption spectra of the quantum wells. The model takes into account the capture, escape and recombination of photoexcited carriers in the quantum wells. The model results are compared with the results from both theoretical model and experimental work. The present model shows a good agreement with the experimental results compared with the other model. It is found that the thickness of intrinsic layer and the quantum well location in the intrinsic layer need to be controlled in order to reduce the dark current of the device.

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A new type of photovoltaic cells is described. The DSSC is modeled using the analytical solution for the semiconductor transport equations of the simple diode. The model includes the effect of the cell shunt conductivity (σ sh ) and series resistance of the cell (R ser ). The solar cell parameters are extracted from experimental results under different illumination levels. The cell parameters are characterized in terms of illumination intensity. The results show a good agreement of the model to fit the experimental data. Current-voltage characteristics, efficiency and fill factor of the DSSC are investigated at different illumination levels.Introduction :