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With a view to improving the switching speed of the internal diode, we exposed CoolMOSTM power MOSFETs as prominent representatives of the new class of charge compensation devices to irradiation by electrons, protons or helium ions for lifetime control and studied the influence of irradiation and annealing parameters on the electrical device characteristics. Our investigations show that electron irradiation provides the best overall result. The reverse recovery charge Q,, can be reduced by a factor of 10 compared to reference devices without any signifcant change of the remaining electrical data of the device.

A significant performance gain of 650V SiC diodes is possible by reducing the wafer thickness from the standard thickness of 350 µm to < 150 µm. Not only the differential resistance of the diodes but also the Rth benefit from this chip thickness reduction. As consequence a further chip size reduction with accompanying capacitive charge reduction leads to a device with improved efficiency in PFC applications under both high load and low load conditions.

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