The electronics era is flourishing and morphing itself into Internet of Everything, IoE. At the same time, questions arise on the issue of electronic materials employed: especially their natural availability and low-cost fabrication, their functional stability in devices, and finally their desired biodegradation at the end of their life cycle. Hydrogen bonded pigments and natural dyes like indigo, anthraquinone and acridone are not only biodegradable and of bio-origin but also have functionality robustness and offer versatility in designing electronics and sensors components. With this Perspective, we intend to coalesce all the scattered reports on the above-mentioned classes of hydrogen bonded semiconductors, spanning across several disciplines and many active research groups. The article will comprise both published and unpublished results, on stability during aging, upon electrical, chemical and thermal stress, and will finish with an outlook section related to biological degradation and biological stability of selected hydrogen bonded molecules employed as semiconductors in organic electronic devices. We demonstrate that when the purity, the long-range order and the strength of chemical bonds, are considered, then the Hydrogen bonded organic semiconductors are the privileged class of materials having the potential to compete with inorganic semiconductors. As an experimental historical study of stability, we fabricated and characterized organic transistors from a material batch synthesized in 1932 and compared the results to a fresh material batch.

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Vacuum processed emeraldine base polyaniline is employed as gate insulating layer in organic field effect transistors. Both polyaniline and the small molecule semiconductor (i.e., C60) layers are successively evaporated without breaking the vacuum in the evaporation chamber, suggesting the applicability of evaporation processes as industrial route for the fabrication of OFETs.

The present study reveals the synthesis of metallic particles at atmospheric pressure using a radiofrequency low‐temperature argon plasma jet. Copper bulk material of the powered electrode acted as solid precursor in the process and the metallic particles were obtained directly in gaseous environment. The particles were collected onto Si (100)‐oriented substrates downstream of the atmospheric plasma jet and were ex situ characterized via optical microscopy, scanning electron microscopy, X‐ray diffraction, and energy‐dispersive X‐ray spectroscopy. We obtained copper particles, reddish brown in color, either of nano‐ or micro‐metric sizes. Additionally, the plasma species and gas temperature were determined by OES. In conclusion, it was demonstrated that conversion of bulk metals into particles is possible at atmospheric pressure using a radiofrequency plasma jet and the development of several applications is recommended.

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