The relation between the force acting on SijN4 film edges and dislocation generation in silicon substrates under the SisN4 film edge is investigated. Samples with 3 • 3 mm square patterns of SijN4 are annealed at 600~176 for 2 hr in N2 atmosphere. The force acting on the film edge is evaluated from the fringe patterns observed in x-ray section topographs. Dislocations generated at the film edge are observed using Secco etching. As a result, it is proved that temperature dependence of a critical force, Sc (N/m), acting on the SijN4 film edge in dislocation generation is represented by Sc = 10.5 exp (Q/kT), where Q is 0.25 eV. Similar procedures are carried out for samples with SisN4-SiO~ films. A thin SiO2 film inserted between the SisN4 film and silicon substrate prevents the formation of dislocations in samples annealed at high temperatures. This suppression effect for dislocation generation is interpreted in terms of the viscoelastic behavior of SiO2 films at high temperatures.In silicon device technology, chemical vapor deposited (CVD) Si3N4 films on silicon substrates have Key words: stress, mechanical property, x-ray section topography.been widely used as selective oxidation masks. It is well known that SigN4 films on silicon substrates have a tensile stress of about 109 N/m2 at room tern- perature (1-3). The origin of this stress is not ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.210.2.78 Downloaded on 2015-05-30 to IP * Electrochemical Society Student Member. * * Electrochemical Society Active Member. Key words: poiycrystaUine silicon, low pressure chemical vapor deposition, phosphorus, ion implantation. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 141.210.2.78 Downloaded on 2015-05-30 to IP

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