We report on a Tm:fiber master oscillator power amplifier (MOPA) system producing 109 W CW output power, with >15 dB polarization extinction ratio, sub-nm spectral linewidth, and M2 <1.25. The system consists of polarization maintaining (PM) fiber and PM-fiber components including tapered fiber bundle pump combiners, a single-mode to large mode area mode field adapter, and a fiber-coupled isolator. The laser components ultimately determine the system architecture and the limits of laser performance, particularly considering the immature and rapidly developing state of fiber components in the 2 μm wavelength regime.

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The laser-damage thresholds of single material and nanolaminate thin films were compared under continuous-wave (CW) illumination conditions. Nanolaminate films consist of uniform material interrupted by the periodic insertion of one or more atomic layers of an alternative material. Hafnia and titania were used as the base materials, and the films were deposited using atomic-layer deposition. The nanolaminates were less polycrystalline than the uniform films, as quantified using x-ray diffraction. It was found that the nanolaminate films had reduced laser-damage thresholds on smooth and patterned substrates as compared to uniform single-material films. This behavior is unusual as prior art indicates that amorphous (less polycrystalline) materials have higher laser-damage thresholds under short-pulse excitation. It is speculated that this may indicate that local thermal conduction affects breakdown more strongly under CW excitation than the dielectric properties that are important for short-pulse excitation.

We designed, fabricated, and tested, polarization selective, graded-reflectivity resonant filters; based on a radial-gradient spatially-distributed, guided-mode resonance device architecture. The demonstrated filters have polarized spectral-resonance responses, distributed across their aperture extent, in the range between 1535 nm and 1540 nm wavelengths. Spectral sensitivity was observed on device tests, for wavelength changes as low as 0.2 nm. Using multiple lithographic exposures and biasing exposure methods, the devices were engineered to have a sub-aperture region, with no hard boundaries or diffraction anomalies.

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