Antiviral therapies are integral in the fight against SARS‐CoV‐2 (i.e. severe acute respiratory syndrome coronavirus 2), the causative agent of COVID‐19. Antiviral therapeutics can be divided into categories based on how they combat the virus, including viral entry into the host cell, viral replication, protein trafficking, post‐translational processing, and immune response regulation. Drugs that target how the virus enters the cell include: Evusheld, REGEN‐COV, bamlanivimab and etesevimab, bebtelovimab, sotrovimab, Arbidol, nitazoxanide, and chloroquine. Drugs that prevent the virus from replicating include: Paxlovid, remdesivir, molnupiravir, favipiravir, ribavirin, and Kaletra. Drugs that interfere with protein trafficking and post‐translational processing include nitazoxanide and ivermectin. Lastly, drugs that target immune response regulation include interferons and the use of anti‐inflammatory drugs such as dexamethasone. Antiviral therapies offer an alternative solution for those unable or unwilling to be vaccinated and are a vital weapon in the battle against the global pandemic. Learning more about these therapies helps raise awareness in the general population about the options available to them with respect to aiding in the reduction of the severity of COVID‐19 infection. In this ‘A Guide To’ article, we provide an in‐depth insight into the development of antiviral therapeutics against SARS‐CoV‐2 and their ability to help fight COVID‐19.

Chemical bonding in native oxides of GaAs, before and after etching, is detected by X-Ray Photoelectron Spectroscopy (XPS). It is correlated with surface energy engineering (SEE), measured via Three Liquid Contact Angle Analysis (3LCAA), and oxygen coverage, measured by High Resolution Ion Beam Analysis (HR-IBA).Before etching, GaAs native oxides are found to be hydrophobic with an average surface energy, γT, of 33 ± 1 mJ/m2, as measured by 3LCAA. After dilute NH4OH etching, GaAs becomes highly hydrophilic and its surface energy, γT, increases by a factor 2 to a reproducible value of 66 ± 1 mJ/m2. Using HR-IBA, oxygen coverage on GaAs is found to decrease from 7.2 ± 0.5 monolayers (ML) to 3.6 ± 0.5 ML. The 1.17 ratio of Ga to As, measured by HR-IBA, remains constant after etching.XPS is used to measure oxidation of Ga and As, as well as surface stoichiometry on two locations of several GaAs(100) wafers before and after etching. The relative proportions of Ga and As are unaffected by adventitious carbon contamination. The 1.16 Ga:As ratio, measured by XPS, matches HR-IBA analysis. The proportions of oxidized Ga and As do not change significantly after etching. However, the initial ratio of As2O5 to As2O3, within the oxidized As, significantly decreases after etching from approximately 3:1 to 3:2.Absolute oxygen coverage, as a function of surface processing, is determined within 0.5 ML by HR-IBA. XPS offers insight into these modifications by detecting electronic states and phase composition changes of GaAs oxides. The changes in surface chemistry are correlated to changes in hydro-affinity and surface energies measured by 3LCAA.

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When different semiconductors are integrated into hetero-junctions, native oxides generate interfacial defects and cause electronic recombination. Two state-of-the-art integration methods, hetero-epitaxy and Direct Wafer Bonding (DWB), require temperatures > 400°C to reduce native oxides. However, T > 400°C leads to defects due to lattice and thermal expansion mismatches. In this work, DWB temperatures are lowered via Nano-Bonding™ (NB) at T ≤ 220°C and P ≤ 60 kPa (9 psi). NB uses Surface Energy Engineering (SEE) at 300K to modify surface energies (γT) to far-from-equilibrium states, so cross-bonding occurs with little thermal activation and compression. SEE modifies γT and hydro-affinity (HA) via chemical etching, planarization, and termination that are optimized to yield 2-D Precursor Phases (2D-PP) metastable in ambient air and highly planar at the nano- and micro- scales. Complementary 2D-PPs nano-contact via carrier exchange from donor 2D-PP surfaces to acceptor ones. Here, NB models and SEE are applied to the DWB of GaAs to Si for photo-voltaics. SEE modifies (1) the initial γT0 and HA0 measured via Three Liquid Contact Angle Analysis, (2) the oxygen coverage measured via High Resolution Ion Beam Analysis, and (3) the oxidation states measured via X-Ray Photoelectron Spectroscopy. SEE etches hydrophobic GaAs oxides with γT = 33.4 ± 1 mJ/m2, and terminates GaAs (100) with H+, rendering GaAs hydrophilic with γT = 60 ± 2 mJ/m2. Similarly, hydrophilic Si native oxides are etched into hydrophobic SiO4H2. H+- GaAs nano-bonds reproducibly to Si, as measured via Surface Acoustic Wave Microscopy, validating the NB model and SEE design.