The thermal diffusivity (TD) and thermal conductivity (TC) of Cu-Cr-diamond composite materials were examined in the temperature range from 50 to 300°C for diamond volume fractions of 22, 40, 50, 55, and 60 %. The samples were fabricated by the plasma pulse sintering (PPS) method. TC does not increase proportionally with the diamond fraction in the particular composite materials. The highest TD was determined for 50 % diamond volume fraction, and the evaluated TC reached 658 W m -1 K -1 at 50°C. This article complements earlier articles concerning synthesis and characterization of the diamond-copper composites produced by the PPS method.

The study of epitaxial graphene layers grown on SiC by two techniques, namely, the traditional Si sublimation method and the recent chemical vapor deposition (CVD) using temperature induced shift of the Raman 2D line, is presented. The measurements of thermal shift rate of 2D line on 4 H-SiC(0001) allowed us to determine notable differences in interaction of graphene with SiC substrate. The obtained results show that graphene layers grown by Si sublimation of 4 H-SiC(0001) are pinned strongly to the substrate. In contrast, the layers of graphene grown on 4 H-SiC(0001) substrates by CVD showed much weaker pinning. It was found that the film consisting of two or three graphene layers grown by CVD was already unpinned and thus showing Raman shift expected for freestanding graphene. The obtained differences in pinning of epitaxial graphene layers are explained in terms of basic growth mechanism differences between these two methods: graphene growth by Si sublimation is a “bottom-up” process and by CVD—a “top-down” process. The obtained results show that the CVD method of growth is an alternative technology for producing high quality graphene structures on SiC.

We investigate the microscopic processes leading to graphene growth by the chemical vapor deposition of propane in the argon atmosphere at the SiC surface. Experimentally, it is known that the presence of argon fastens the dehydrogenation processes at the surface, in high temperature of about 2000 K. We perform ab-initio calculations, at zero temperature, to check whether chemical reactions can explain this phenomenon. Density functional theory and supporting quantum chemistry methods qualitatively describe formation of the graphene wafers. We find that the 4H-SiC(0001) surface exibits large catalytic effect in the adsorption process of hydrocarbon molecules, this is also supported by preliminary molecular dynamics results. Existence of the ArH+ molecule, and an observation from the Raman spectra that the negative charge transfers into the SiC surface, would suggest that presence of argon atoms leads to a deprotonization on the surface, which is necessary to obtain pure carbon add-layer. But the zero-temperature description shows that the cold environment is insufficient to promote the argon-assisted surface cleaning.

The Seebeck coefficient in multilayer graphene is investigated within the density-functional theory, using the semiclassical Boltzmann equations and interpolating the bands in a maximally-localized Wannier functions basis set. We compare various graphene stackings (AA, AB and ABC) both freestanding and deposited on a 4H-SiC(0001) C-terminated substrate. We find that the presence of the SiC substrate can significantly affect the thermopower properties of graphene layers, depending on the stacking, providing a promising way to tailor efficient graphene-based devices.

The study is aimed at comparing the changes which occur in the microstructure and thermo-physical properties of pure copper (99.9%) and when copper alloyed with chromium and zirconium subjected to severe plastic deformation (SPD). The plastic deformation techniques employed were hydrostatic extrusion (HE), equal channel angular pressing (ECAP), and a combination of these two processes. The materials thus obtained had an ultra-fine-grained structure with the thermo-physical properties differing from those of the untreated materials. It appeared that there is a correlation between the deformation method employed and the thermo-physical properties of the materials, such as diffusivity and specific heat.