This paper presents a low-temperature solution-processed passivation material based on polysilsesquioxane (PSQ) which greatly improves electrical performance and stability of solution-processed amorphous InZnO (a-IZO) thin-film transistors (TFTs). PSQ-passivated TFTs exhibited maximum mobilities of 6.02 cm2 V−1 s−1 with the smallest threshold voltage shift of 2.8 V after positive bias stress test. We showed that hydrogen-related ions from PSQ passivation help passivate oxygen vacancies, thus improving the percolation path in a-IZO channel. Moreover, PSQ-passivated TFTs showed minimal change after being subjected to humidity stress. These results demonstrate the ability of low-temperature PSQ passivation as an effective barrier against atmospheric effects.

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We demonstrate a solution processed gate insulator (GI) with high dielectric constant (high-k) of up to ∼8.9 for high performance and low voltage operation amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). High mobilities of up to ∼30 cm2 V s−1, threshold voltage of <0.5 V, and low off current (∼10−12 A) can be achieved through the combination of high-k BaTiO x (BTO) nanoparticles and a polysiloxane (PSX) polymer matrix. This combination enables a lower process temperature of 300 °C from 650 °C while ensuring enhanced performance and low gate leakage current. We also show the tunability of the high-k hybrid BTO/PSX through fluorination and addition of a photosensitive property to further reduce the leakage current and inhibit dry etching related degradation. High-k hybrid BTO/PSX GI is a promising candidate for high performance and low-voltage operation oxide TFTs.

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