This paper introduces a complete simulation model of a Direct Power Injection (DPI) setup, used to measure the immunity of integrated circuits to conducted continuous-wave interference. This model encompasses the whole measurement setup itself as well as the integrated circuit under test and its environment (printed circuit board, power supply). Furthermore, power losses are theoretically computed, and the most significant ones are included in the model. Therefore, the injected power level causing a malfunction of an integrated circuit, according to a given criterion, can be identified and predicted at any frequency up to 1 GHz. In addition to that, the relationship between immunity and impedance is illustrated. Simulation results obtained from the model are compared to measurement results and demonstrate the validity of this approach.

This paper presents a comparative study of the efficiency of several embedded EMI protections for integrated circuits (ICs) with respect to direct power injection (DPI) and very fast transmission-line pulsing (VF-TLP) into the substrate of the IC. This study involves three functionally identical cores, differing only by their EMI protection strategies (RC protection, isolated substrate, meshed power supply network) which were initially designed for low-emission design guidelines. Through extensive measurements, a classification between these strategies is established for both injection methods, leading to the introduction of design guidelines for the minimization of conducted susceptibility to substrate injection.

This paper introduces complete simulation models of typical electromagnetic immunity tests for integrated circuits (ICs). Direct Power Injection (DPI), Near-field (NF) and VeryFast Transmission Line Pulsing (VF-TLP) experiments are modeled accurately, and comparisons between simulations and measurements for each set-up demonstrate the validity of this approach and lead to the development of an immunity prediction method for ICs. I. INTRODUCTIONNowadays, the steep growth of mass-market electronic communication systems is the source of numerous electromagnetic disturbances, to with an increasing number of integrated circuits (ICs) are becoming more and more susceptible. Indeed, the decrease in geometry length induces a reduction in power supply voltage and, consequently, noise margin. Several injection methods such as direct power injection (DPI), very-fast transmission line pulsing (VF-TLP) and near-field injection (NF) are described in this paper in order to characterize the behavior of ICs to electromagnetic interference. Comparisons between measurement results obtained with these methods and simulation models developed for these measurement set-ups, are introduced for a fullcustom 0.18 μm CMOS IC which was designed initially for low-emission guidelines. These simulation models include the electrical models of every device used in the injection system, depending on the injection method, as well as those of the printed circuit board (PCB) and the integrated circuit (transistor netlist). DPI and NF models take into account the power losses introduced during these experiments, while the VF-TLP model (pulse injection) does not. These results demonstrate significant correlations between measurements and simulations, making it possible to predict the immunity of an IC on a given printed circuit board.

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