This paper introduces complete simulation models of typical electromagnetic immunity tests for integrated circuits (ICs). Direct Power Injection (DPI), Near-field (NF) and VeryFast Transmission Line Pulsing (VF-TLP) experiments are modeled accurately, and comparisons between simulations and measurements for each set-up demonstrate the validity of this approach and lead to the development of an immunity prediction method for ICs. I. INTRODUCTIONNowadays, the steep growth of mass-market electronic communication systems is the source of numerous electromagnetic disturbances, to with an increasing number of integrated circuits (ICs) are becoming more and more susceptible. Indeed, the decrease in geometry length induces a reduction in power supply voltage and, consequently, noise margin. Several injection methods such as direct power injection (DPI), very-fast transmission line pulsing (VF-TLP) and near-field injection (NF) are described in this paper in order to characterize the behavior of ICs to electromagnetic interference. Comparisons between measurement results obtained with these methods and simulation models developed for these measurement set-ups, are introduced for a fullcustom 0.18 μm CMOS IC which was designed initially for low-emission guidelines. These simulation models include the electrical models of every device used in the injection system, depending on the injection method, as well as those of the printed circuit board (PCB) and the integrated circuit (transistor netlist). DPI and NF models take into account the power losses introduced during these experiments, while the VF-TLP model (pulse injection) does not. These results demonstrate significant correlations between measurements and simulations, making it possible to predict the immunity of an IC on a given printed circuit board.

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