We report visible (380–650 nm) electroluminescence from reverse-biased silicon p-n junctions and from n- and p-type field-effect transistors designed for a standard chip-fabrication process. We measured the spectra of over 40 junctions and devices and found that they differed from previously reported silicon electroluminescence spectra. We use a hot carrier recombination model and account for Fabry-Perot effects to explain the observed electroluminescence spectrum. Our model’s prediction is in good agreement with the measured spectra.

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Two discrete processing techniques have been combined for the doping and silicidation of thin (∼125 nm) amorphous silicon (a-Si) film. One technique uses an implantation barrier consisting of a stack of low temperature cobalt silicide (CoSi) and a-Si. The other technique incorporates nitrogen (N2+) to suppress CoSi2 agglomeration. When combined, the implantation barriers consisting of the CoSi/a-Si stack or a-Si films reduce boron penetration in p-channel metal–oxide–semiconductor devices and the implanted N2+ hinders cobalt silicide agglomeration. The two processing approaches presented here differ only in the implantation sequence. TRIM (transport of ions in matter) simulation has been used to predetermine the approximate doses and energies of implantation species. Sheet resistances are measured to assess the silicide thickness and quality of the resulting films. Depth profiles for boron, nitrogen, fluorine and cobalt have been extracted analytically by secondary ion mass spectroscopy. Transmission electron microscopy micrographs have been included to show the silicide/Si interface and also to manifest that there is no grain boundary grooving in the resulting cobalt silicide film.