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A flexible and stretchable electronic device is an inevitable component to realize wearable and foldable display device. This requires high stability of backplane device operation on flexible substrate upon external mechanical stress such as bending, stretching, and other types of deformation induced stress. Because mechanical stress effects electrical characteristics and degrades the device performance, many researchers have studied the mechanical stress behavior of thin-film transistor devices on flexible substrates. In this work we present a process simulation model for non-linear deformation stress. We also demonstrate the validation of the model against publish data.

We report an experimental and simulation study for introducing Boron ions into high Ge content relaxed SiGe layers and into Ge wafers. The successful calibration of our Monte Carlo ion implantation simulator for this wide class of materials is demonstrated by comparing the predicted Boron profiles with SIMS data. The larger nuclear and electronic stopping power of the Ge atom is responsible for the trend to shallower profiles with increasing Ge content in SiGe alloys. The generated point defects are estimated by using a modified Kinchin-Pease model. We found that the higher displacement energy in Ge, the stronger backscattering effect, and the smaller energy transfer from the ion to the primary recoil of a collision cascade are mainly responsible for the significantly reduced damage in Ge. Finally the point responses in Si and Ge are presented and the Boron distributions are discussed.

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