P‐131: TCAD Modeling of Mechanical Stress for Simulation of Thin Film Transistor on Flexible Substrate

Kong, Sungwon; Lim, H.C.; Hoessinger, Andreas; Guichard, E.

doi:10.1002/sdtp.13255

Cited by 3 publications

(2 citation statements)

References 10 publications

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“…In addition to efforts to integrate flexible device models into SPICE, other studies have been done to simulate the mechanical deformations of devices and the related variation of electrical properties. In [251] both the biaxial and uniaxial bending stresses in polysilicon TFTs using process conditions like thermal mismatch among materials have been modeled, in [252] a framework based on the nonlinear finite element technique for obtaining stress/strain mapping from the deformation gradient for isotropic materials is developed, that in [253] has been applied to flexible electronics application. In [254] a simulation approach for evaluating the performance of arbitrarily deformed flexible electronic components is presented, that exploits a computer graphic method for three-dimensional object manipulation.…”

Section: Required Features Of Design Toolsmentioning

confidence: 99%

A Brief Review on Flexible Electronics for IoT: Solutions for Sustainability and New Perspectives for Designers

Scandurra

Arena

Ciofi

2023

Sensors

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The Internet of Things (IoT) is gaining more and more popularity and it is establishing itself in all areas, from industry to everyday life. Given its pervasiveness and considering the problems that afflict today’s world, that must be carefully monitored and addressed to guarantee a future for the new generations, the sustainability of technological solutions must be a focal point in the activities of researchers in the field. Many of these solutions are based on flexible, printed or wearable electronics. The choice of materials therefore becomes fundamental, just as it is crucial to provide the necessary power supply in a green way. In this paper we want to analyze the state of the art of flexible electronics for the IoT, paying particular attention to the issue of sustainability. Furthermore, considerations will be made on how the skills required for the designers of such flexible circuits, the features required to the new design tools and the characterization of electronic circuits are changing.

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Section: Required Features Of Design Toolsmentioning

confidence: 99%

A Brief Review on Flexible Electronics for IoT: Solutions for Sustainability and New Perspectives for Designers

Scandurra

Arena

Ciofi

2023

Sensors

View full text Add to dashboard Cite

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“…In recent work, Kong et al have modeled and simulated both the biaxial and uniaxial bending stresses in polysilicon TFTs using process conditions like thermal mismatch among materials and so forth 26 . The authors considered nonlinear deformation theory to predict the stress distribution.…”

Section: Simulation Environmentmentioning

confidence: 99%

Deformation‐induced stress/strain mapping and performance evaluation of a‐IGZO thin‐film transistors for flexible electronic applications

2020

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In the flexible electronics sector, there is an urgent need for higher performance, and hence, many new technologies are emerging in recent years. The field of organic and printed electronics allows low production costs and large areas. The silicon technology allows nanometric resolutions and better performance. A new technology CAD (TCAD)‐based design methodology is needed to combine both mechanical flexibility and high performance. This work presents a predictive TCAD calibration methodology for indium‐gallium‐zinc‐oxide thin‐film transistors (TFTs), employing physics‐based modeling to support and enhance simulation‐based device development. In this work, based on the nonlinear finite element technique, a TCAD framework has been developed to introduce different types of large deformations and obtain the local stress/strain profiles (mapping) inside the devices. The impacts of various kinds of deformations on the electrical characteristics of the strained TFTs are studied. The feasibility (via predictions) for amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) TFTs, combining considerable mechanical flexibility, high electrical performance, and finally, excellent stability under deformation, may be useful for mechanical deformation‐aware design and modeling for highly flexible electronics. To the best of our knowledge, the highest cutoff frequency (fT > 690 MHz) possible for strain‐engineered a‐IGZO TFTs is predicted in entirely flexible technologies that can be used to realize active transceivers operating in the MHz regime.

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Recent review on improving mechanical durability for flexible oxide thin film transistors

Han¹,

Jeong²,

Kim³

et al. 2019

J. Phys. D: Appl. Phys.

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Amorphous oxide semiconductor thin film transistors (AOS TFT) have recently attracted attention as next generation display backplane materials. In this article, the current research trends and status of AOS TFTs for flexible displays are discussed. First, the degradation mechanism of AOS TFTs via bending stress is examined. In this part, we investigate how to define bending strain, i.e. how the bending stress deteriorates the TFT performance. In addition, we examine the recovery process of the mechanically degraded TFT via thermal energy. Then, we introduce various materials and structures to improve the mechanical durability of AOS TFTs. The material approach as well as the structural approach for each layer (substrate, buffer layer, electrode, active and gate insulator) are included in this paper.

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P‐131: TCAD Modeling of Mechanical Stress for Simulation of Thin Film Transistor on Flexible Substrate

Cited by 3 publications

References 10 publications

A Brief Review on Flexible Electronics for IoT: Solutions for Sustainability and New Perspectives for Designers

A Brief Review on Flexible Electronics for IoT: Solutions for Sustainability and New Perspectives for Designers

Deformation‐induced stress/strain mapping and performance evaluation of a‐IGZO thin‐film transistors for flexible electronic applications

Recent review on improving mechanical durability for flexible oxide thin film transistors

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