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We calculated size-dependent single particle energy eigenvalues, wave functions, energy band gap, and dielectric constant for a semiconductor nanocrystallite, within the framework of the two band Penn model. The finite size effects are presented as size-dependent correction terms to the energy eigenvalues and the energy band gap of the bulk semiconductor. Ours is a self-consistent calculation within the Penn model [Phys. Rev. 128, 2093 (1962)], providing a much deeper understanding of the size dependences of energy band gap and the dielectric constant, as compared to those performed in the past using the so called generalized Penn model. Computed results on energy band gap and dielectric constant from our investigations exhibit very good agreement with those obtained from experimental measurements and the detailed numerical calculations performed using techniques such as density functional approach. Unlike our calculation, prior reported calculations of dielectric constant with the use of the generalized Penn model completely ignore or do not properly take into account the size dependences of oscillator strength and the energy band gap. It is shown that the size dependences of oscillator strength and the energy band gap play an important role and they lead to a fractional exponent (between 1 and 2) of size (radius) that appears in the formula for the dielectric constant of a nanocrystallite.

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The densilydensity correlation function has been calculated for a modulation-doped GaAs/AIAs superlattice. The superlattice is modelled to be an infinite periodic sequence of layers which consists of two dissimilar layen. one of GaAs and the other of M A S , per unit cell. The conduction electrons nre assumed to be confined to CaAs layen. Our calculation shows t h l . although the electron gas is confined io the GaAs layers, the plasma oscillations can interact with the lattice vibrations of both GaAs and AIAs. The interaction between AlAs lattice vibntioWand.the plwnons significantly contributes to the light-scattering specuum. It is therefore nrgued that the experimentally measured frequencies of the coupled plasmon-phonon modes and their lineshapes for a modulation-doped GaAsIAlAs superlattice cannot correctly be described by the previous theoretical calculations which have been performed for a layered electron gas embedded in a homogeneous dielectric background. For the special case of a homogeneous dielectric background. our results. however, agree with the previously reporled calculations.