The relevance of the research topic is due to the increasing degree of need to solve the problem of regional development in program-targeted management. The article considers the approaches to the economic assessment of the development of the region, the definition of the program-target management of the development of the region is proposed. Conclusions are drawn about the need to form a new paradigm of managing the development of the region on the basis of program-targeted management
The article deals with the technological process of manufacturing CMOS integrated circuits on KNS (silicon on sapphire) structures for space purposes. The technology is based on an n-type CMOS process with one level of polysilicon and two levels of metal. The components of the technological process are analyzed. The sequence of the technological process and its features are given. An example of a description of one of the elements is considered.
The article describes a microcircuit intended for certification of CMOS technology for the production of RS LSI on SPS structures. Its general and technical characteristics are considered. The description and substantiation of the construction, which unites variables by switching layers, allows to implement library elements. The library of elements of the base matrix crystal is considered: its composition and development features. Formulas for calculating the signal delay by the bistable method and estimating the duration of the front of the response of an element at its output are given.
The article presents the results of studies of ultrafast rectifier diodes intended for use in high-frequency rectifiers, modulators, converters, pulse transducers, limiters and other pulse devices under the influence of radiation. The schemes of measuring the current and voltage of diodes under the influence of special factors are given
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