The domain structure of an antiferromagnetic superlattice is studied. Synchrotron Mössbauer and polarized neutron reflectometric maps show micrometer-size primary domain formation as the external field decreases from saturation to remanence. A secondary domain state consisting mainly of at least 1 order of magnitude larger domains is created when a small field along the layer magnetizations induces a bulk-spin-flop transition. The domain-size distribution is reproducibly dependent on the magnetic prehistory. The condition for domain coarsening is shown to be the equilibrium of the external field energy with the anisotropy energy.

The authors investigate the implications of amorphizing ion implants on the crystalline integrity of sub-20nm wide fin field-effect transistors (FinFETs). Recrystallization of thin body silicon is not as straightforward as that of bulk silicon because the regrowth direction may be parallel to the silicon surface rather than terminating at it. In sub-20nm wide FinFETs surface proximity suppresses crystal regrowth and promotes the formation of twin boundary defects in the implanted regions. In the case of a 50nm amorphization depth, random nucleation and growth leads to polycrystalline silicon formation in the top ∼25nm of the fin, despite being only ∼25nm from the crystalline silicon seed.

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