Aluminum nitride (AlN) memristive devices have attracted a great deal of attention because of their compatibility with the CMOS fabrication technology, and more likely to be extended to power electronic devices. However, the conductive mechanism and the variability of resistance switching (RS) parameters are major issues for commercial applications. In this paper, we have obtained electrical characteristics of the Al/AlN/Pt memristors under the current compliance limits of 1 𝜇𝜇𝜇𝜇 and 10 𝜇𝜇𝜇𝜇, respectively. Furthermore, the statistics of switching parameters has been done in the Set and Reset processes. Finally, a quantum point contact model has been developed to account for conducting mechanisms and shows the evolution of the conductive filament during RS transitions.

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