In this study, we first fabricated a new GaAs-based dielectric-supported air-gap microstrip lines (DAMLs) by the surface microelectromechanical systems (MEMS) technology, and then fabricated the low-pass filter (LPF) for the Ka-band using those DAMLs. We elevated the signal lines from the surface in order to reduce the substrate dielectric loss and to obtain low losses at the millimeter-wave frequency band with a wide impedance range. We fabricated LPFs with DAMLs for Ka-bands, and we were able to reduce the insertion loss of LPFs by reducing the dielectric loss of the DAMLs. Miniaturization is essential for integrating LPFs with active devices, so we fabricated a LPF with the slot on the ground metal to reduce the size of the LPF. We compared the characteristics of the LPF with a slot and the LPF without the slot.
This paper describes a new GaAs-based surface-micromachined microstrip line supported by dielectric posts and with an air gap between the signal line and the ground metal. This new type of dielectric post and air-gapped microstripline (DAML) structure was developed using surface micromachining techniques to provide an easy means of air-bridge connection between the signal lines and to achieve low losses in the millimeter-wave frequency band with a wide impedance range. Each DAML is fabricated with a length of 5 mm. By elevating the signal lines from the substrate using micromachining technology, the substrate dielectric loss can be reduced. Compared with conventional microstrip transmission lines, which show over 10 dB cm−1 loss, the loss of a DAML can be reduced to 1.1 dB cm−1 at 50 GHz.
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