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This work presents a novel method to form polycrystalline CuIn1−xGaxSe2 (CIGS) thin film by co-sputtering of In–Se and Cu–Ga alloy targets without an additional selenization process. An attempt was also made to thoroughly elucidate the surface morphology, crystalline phases, physical properties, and chemical properties of the CIGS films by using material analysis methods. Experimental results indicate that CIGS thin films featured densely packed grains and chalcopyrite phase peaks of (112), (220), (204), (312), and (116). Raman spectroscopy analysis revealed chalcopyrite CIGS phase with Raman shift at 175cm−1, while no signal at 258cm−1 indicated the exclusion of Cu2-xSe phase. Devices built with these films exhibit efficiencies as high as 8.6%.

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This paper describes a polysilicon thin-film transistor (TFT) with a multi-trenched body that has been fabricated and found to suppress the off-state leakage current without degrading the on-state current or other electric properties. The thin-film structure minimizes carrier scattering through the polysilicon's grain-boundary traps. In addition to this effect, our multi-trenched structure reduces the off-state current by 50% compared to a conventional TFT. The effects of high temperature and dc hot-carrier stress are also measured in comparison to a conventional TFT. At 100 • C, the multi-trenched-body TFT has a higher output saturation current. After 10 000 s of stress testing, the trench-bodied structure continues to outperform the conventional TFT.