2014
DOI: 10.1016/j.tsf.2014.05.053
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Effects of substrate temperature on the Cu2ZnSnS4 films deposited by radio-frequency sputtering with single target

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Cited by 35 publications
(8 citation statements)
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“…Feng et al fabricated a CZTS photovoltaic device using a cosputtering technique followed by two-step treatment and reported better energy conversion efficiency of 5.85% with higher hole concentration and lower defect density than conventional CZTS device with one-step annealing [34]. Scragg [38]. They investigated that the increase of substrate temperature caused a significant reduction of sulfur content, an increment of the copper content in the as-grown films, and a decrease in strain and dislocation density in the deposited films.…”
Section: 12mentioning
confidence: 99%
“…Feng et al fabricated a CZTS photovoltaic device using a cosputtering technique followed by two-step treatment and reported better energy conversion efficiency of 5.85% with higher hole concentration and lower defect density than conventional CZTS device with one-step annealing [34]. Scragg [38]. They investigated that the increase of substrate temperature caused a significant reduction of sulfur content, an increment of the copper content in the as-grown films, and a decrease in strain and dislocation density in the deposited films.…”
Section: 12mentioning
confidence: 99%
“…The theoretical solar conversion efficiency of CZTS-based solar cells is estimated to be 32% [2]. Several types of deposition techniques for CZTS thin films have been investigated, including a combination of sputtering of precursor layers and post-deposition sulfurization [3][4][5][6][7][8], reactive sputtering [9,10], sputtering using a quaternary target or mixed compound target [11][12][13][14][15][16][17][18], pulsed-laser deposition [19], thermal evaporation [20], spray pyrolysis [21,22], electro-deposition [23], and chemical solution-based synthesis [24].…”
Section: Introductionmentioning
confidence: 99%
“…The higher energy leads to better rearrangement the during deposition process and, hence, better film quality. Jheng et al reported a one-stage fabrication method of CZTS thin films using single target sputtering approach [84]. The substrate temperature was kept at 50°C, 100°C, 150°C and 200°C during the deposition processes.…”
Section: Sputteringmentioning
confidence: 99%
“…CdS thin films are widely used as a buffer layer in CZTS-based solar cells to form a heterojunction [84,157]. However, the carrier recombination at the interface between CZTS absorber and CdS buffer results in a decrease of Voc.…”
Section: Effect Of Buffer Layer In Device Architecturementioning
confidence: 99%
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