In recent years, optical modulators, photodetectors, (de)multiplexers, and heterogeneously integrated lasers based on silicon optical platforms have been verified. The performance of some devices even surpasses the traditional III-V and photonic integrated circuit (PIC) platforms, laying the foundation for large-scale photonic integration. Silicon photonic technology can overcome the limitations of traditional transceiver technology in high-speed transmission networks to support faster interconnection between data centers. In this article, we will review recent progress for silicon PICs. The first part gives an overview of recent achievements in silicon PICs. The second part introduces the silicon photonic building blocks, including low-loss waveguides, passive devices, modulators, photodetectors, heterogeneously integrated lasers, and so on. In the third part, the recent progress on high-capacity silicon photonic transceivers is discussed. In the fourth part, we give a review of high-capacity silicon photonic networks on chip.

Fast electro-optic modulators with an ultracompact footprint and low power consumption are always highly desired for optical interconnects. Here we propose and demonstrate a high-performance lithium niobate electro-optic modulator based on a new 2 × 2 Fabry–Perot cavity. In this structure, the input and reflected beams are separated by introducing asymmetric multimode-waveguide gratings, enabling TE 0 − TE 1 mode conversion. The measured results indicate that the fabricated modulator features a low excess loss of ∼ 0.9    dB , a high extinction ratio of ∼ 21    dB , a compact footprint of ∼ 2120    μm 2 , and high modulation speeds of 40 Gbps OOK and 80 Gbps PAM4 signals. The demonstrated modulator is promising for high-speed data transmission and signal processing.

Optical communication wavelength is being extended from the near-infrared band of 1.31/1.55 µm to the mid-infrared band of 2 µm or beyond for satisfying the increasing demands for high-capacity long-distance data transmissions. An efficient electro-optic (EO) modulator working at 2 µm is highly desired as one of the indispensable elements for optical systems. Lithium niobate (LiNbO3) with a large second-order nonlinear coefficient is widely used in various EO modulators. Here, we experimentally demonstrate the first Mach-Zehnder EO modulator working at 2 µm based on the emerging thin-film LiNbO3 platform. The demonstrated device exhibits a voltage-length product of 3.67 V·cm and a 3-dB-bandwidth of >22 GHz which is limited by the 18 GHz response bandwidth of the photodetector available in the lab. Open eye-diagrams of the 25 Gb/s on-off keying (OOK) signals modulated by the fabricated Mach-Zehnder EO modulator is also measured experimentally with a SNR of about 14 dB.

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A high-performance optical filter is proposed and realized with multimode waveguide grating (MWG) and two-mode multiplexers on the x-cut lithium-niobate-on-insulator (LNOI) platform for the first time, to the best of our knowledge. The present optical filter is designed appropriately to avoid material anisotropy as well as mode hybridness, and has a low excess loss of 0.05 dB and a high sidelobe suppression ratio (SLSR) of 32 dB in theory with Gaussian apodization. The fabricated filters show a box-like response with 1-dB bandwidth of 6–23 nm, excess loss of ∼0.15 dB, sidelobe suppression ratio of >26 dB. The device performance is further improved with a sidelobe suppression ratio as high as 48 dB and a low excess loss of ∼0.25 dB by cascading two identical MWGs.