The authors have studied the interactions between implant defects and phosphorus diffusion in crystalline silicon. Defect engineering enables ultrashallow n+∕p junction formation using phosphorus, carbon, and germanium coimplants, and spike anneal. Their experimental data suggest that the positioning of a preamorphized layer using germanium implants plays an important role in phosphorus diffusion. They find that extending the overlap of germanium preamorphization and carbon profiles results in greater reduction of phosphorus transient-enhanced diffusion by trapping more excess interstitials. This conclusion is consistent with the end-of-range defects calculated by Monte Carlo simulation and annealed carbon profiles.

Articles you may be interested inStudy of millisecond laser annealing on recrystallization, activation, and mobility of laser annealed SOI doped via arsenic ion implantation Fluorine-enhanced boron diffusion in germanium-preamorphized silicon J. Appl. Phys. 98, 073521 (2005); 10.1063/1.2084336 Erbium-implanted silicon-germaniumThe effect of preamorphization and solid-phase epitaxial regrowth on indium doping profiles in silicon has been investigated. It is shown that preamorphized silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. During recrystallization by thermal annealing, indium segregates in front of the moving amorphous/ crystalline interface, creating a clearly visible peak in the doping profile. We establish that the physical mechanism for this phenomenon in the 10 18 -10 19 cm Ϫ3 concentration range is segregation determined, as there is no significant concentration dependence for those doses studied in this work. We also demonstrate that this phenomenon is enhanced at lower temperatures.

A modern CMOS image sensor (CIS) is not only a high-precision, high-dynamic-range, mix-signal electronic device, the system design also requires an integrated consideration on optical imaging function. As pixel size continues to scale down, pixel performance needs to be maintained at an equivalent level to avoid overall image quality degradation. This paper describes several system-level properties such as quantum efficiency, noise performance, and crosstalk under illumination of a tilted incident angle.

A continuum model of phosphorus diffusion with germanium and carbon coimplant has been proposed and calibrated based on secondary ion mass spectroscopy (SIMS) profiles aiming at ultra shallow junction (USJ) formation in advanced CMOS technologies. The phosphorus diffusion behaviors are well captured by our model under various implant and annealing conditions, representing a significant step towards advanced n-type USJ formation technique using phosphorus and carbon coimplant for aggressively scaled CMOS technologies.