We developed a continuous roll‐to‐roll process for the fabrication of electrodes of silver nanowire (AgNWs) networks. For high‐throughput flexible electronic devices to be ready for the market, their transparent conductive electrodes (TCEs) should show stable working performance during folding conditions and have a long operating life. In this study, TCEs were produced by AgNWs electrodes. The AgNWs electrodes showed an outstanding sheet resistance value of 50 ohm/sq, 92.3% transmittance, mechanical stability, and excellent long‐term stability. Flexible touch screen were produced using the AgNWs transparent electrodes on a flexible COP substrate. The touch screen performance is superior to that of a device based on the as‐coated AgNWs electrode. The roll‐to‐roll process provides a facile and reliable method for fabricating large‐area AgNWs transparent flexible electrodes for next‐generation flexible touch screen devices.

The high-quality InN epifilms and InN microdisks have been grown with InGaN buffer layers at low temperatures by plasma-assisted molecular beam epitaxy. The samples were analyzed using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence. The characteristics of the InN epifilms and InN microdisks were studied, and the role of InGaN buffer was evaluated.

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