High open circuit voltage Noe} is a potential benefit of thin silicon solar cells. A new thin silicon solar cell structure is proposed using silicon-on-insulator (Sal) technology that investigates the properties of high voltage in thin silicon designs with an epitaxial emitter. Key design parameters are low rear and front surface recombination, low dark current and efficient light trapping. We propose a patterned emitter area on a sal substrate. The advantages of this design are the passivation properties embedded in the buried oxide and the reduced junction area. With a uniform epitaxial emitter, the top contact shadowing can be designed to be 0%. Preliminary results show Voe >525mV and Jse>20mA/cm2 with_anti-reflection coating.This represents a substantial increase from previous work by . This present design also demonstrates the effect of a smaller emitter area and reports higher performance parameters for reported silicon cells fabricated on sal substrates.

Thin Si solar cell with epitaxial lateral overgrowth (ELO) structure described in this paper should demonstrate higher voltage. PC-1D program has been used to study the open circuit voltage and efficiency as a function of the thin Si thickness and light trapping. According to the simulation results, high voltage can be obtained even without light trapping on the backside of the thin Si layer. Thin n type silicon layer has been grown on p+ Si substrate using the method of epitaxial lateral overgrowth by CVD. The scanning electron microscopy (SEM) has been used to show the dimension of the pn junction region and light generation region after the n type Si growth.

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