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Atomic layer deposition (ALD) is a powerful tool for achieving atomic level control in the deposition of thin films. However, several physical and chemical phenomena can occur which cause deviation from “ideal” film growth during ALD. Understanding the underlying mechanisms that cause these deviations is important to achieving even better control over the growth of the deposited material. Herein, we review several precursor chemisorption mechanisms and the effect of chemisorption on ALD growth. We then follow with a discussion on diffusion and its impact on film growth during ALD. Together, these two fundamental processes of chemisorption and diffusion underlie the majority of mechanisms which contribute to material growth during a given ALD process, and the recognition of their role allows for more rational design of ALD parameters.

Thermal atomic layer deposition (ALD) of metals on metal oxide surfaces typically suffers from nucleation delays that result in poor-quality films. The poor nucleation may be caused by a lack of suitable chemisorption sites on the oxide surface, which are needed for metal nucleation to occur. In this work, we demonstrate that prefunctionalizing the surface with a single monolayer of small organometallic molecules from the vapor phase can lead to a significant increase in surface coverage of the metal deposited by ALD. This process is demonstrated for Pt ALD from (methylcyclopentadienyl)­trimethylplatinum (MeCpPtMe3) and O2, with nucleation enhanced almost 3-fold at 100 ALD cycles after the pretreatment. We hypothesize that the high coverage of the organometallic molecule provides an alternative chemisorption mechanism for the platinum precursor and thus leads to an increase in its uptake. The proposed chemisorption mechanism is robust across several organometallic molecule pretreatments and could potentially be exploited for other organometallic-based metal ALD processes. This chemisorption mechanism was probed using in situ quadrupole mass spectrometry (QMS). The growth of the platinum deposits was investigated in depth through scanning electron microscopy (SEM) and grazing incidence small-angle X-ray scattering (GISAXS). These studies show that the pretreatment also results in the improved wettability of Pt nanoparticles (NPs). The improved wettability is likely to affect the Pt diffusion properties, further contributing to the enhancement observed on the treated substrates. In addition, GISAXS and SEM studies indicate the growth of larger, denser, and more highly ordered Pt NPs at early cycle numbers, which subsequently coalesce into continuous and pinhole-free films. Surface pretreatment by organometallic molecules therefore introduces a potential route to achieve improved nucleation and growth of ultrathin films.

Atomic layer deposition (ALD) has become an important technique to synthesize a wide variety of materials on the subnanometer length scale. Expanding the library of ALD for ternary materials is vital for applications in which ternary materials allow for tuning of physical, optical, and electronic properties. In this work, we demonstrate the first report of nickel–aluminum oxide (Ni–Al–O) films deposited by ALD using nickelocene-ozone and trimethylaluminum-water as reactants. While deposition of a wide range of compositions is achieved, the observed growth per cycle (GPC) did not follow the simple combination of GPCs measured for the binary ALD processes. Nucleation studies performed to better understand this behavior reveal that the deposition of aluminum oxide is greatly enhanced on a NiO surface prepared by nickelocene and ozone. A model is developed that considers nucleation effects to predict composition and thickness as a function of supercycle recipe. Characterization of the deposited films shows that Al-doping of NiO results in contraction of the NiO lattice, decreased crystallinity, and reduced density, and that films become completely amorphous at compositions with less than 50% Ni. In addition, Al-doped NiO films deposited by ALD are investigated as a hole-selective transport layer in lead-based perovskite solar cells. An Al doping of ∼4% improves power conversion efficiency of the perovskite-based devices over that of NiO primarily through increases in fill factor.