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LiNiO2 (LNO) is a promising cathode material for next‐generation Li‐ion batteries due to its exceptionally high capacity and cobalt‐free composition that enables more sustainable and ethical large‐scale manufacturing. However, its poor cycle life at high operating voltages over 4.1 V impedes its practical use, thus motivating efforts to elucidate and mitigate LiNiO2 degradation mechanisms at high states of charge. Here, a multiscale exploration of high‐voltage degradation cascades associated with oxygen stacking chemistry in cobalt‐free LiNiO2, is presented. Lattice oxygen loss is found to play a critical role in the local O3–O1 stacking transition at high states of charge, which subsequently leads to Ni‐ion migration and irreversible stacking faults during cycling. This undesirable atomic‐scale structural evolution accelerates microscale electrochemical creep, cracking, and even bending of layers, ultimately resulting in macroscopic mechanical degradation of LNO particles. By employing a graphene‐based hermetic surface coating, oxygen loss is attenuated in LNO at high states of charge, which suppresses the initiation of the degradation cascade and thus substantially improves the high‐voltage capacity retention of LNO. Overall, this study provides mechanistic insight into the high‐voltage degradation of LNO, which will inform ongoing efforts to employ cobalt‐free cathodes in Li‐ion battery technology.

High-temperature operation of metal-semiconductor-metal (MSM) UV photodetectors fabricated on pulsed laser deposited β-Ga2O3 thin films has been investigated. These photodetectors were operated up to 250 °C temperature under 255 nm illumination. The photo current to dark current (PDCR) ratio of about 7100 was observed at room temperature (RT) while it had a value 2.3 at 250 °C at 10 V applied bias. A decline in photocurrent was observed from RT to 150 °C and then it increased with temperature up to 250 °C. The suppression of the blue band was also observed from 150 °C temperature which indicated that self-trapped holes in Ga2O3 became unstable. Temperature-dependent rise and decay times of carriers were analyzed to understand the photocurrent mechanism and persistence photocurrent at high temperatures. Coupled electron-phonon interaction with holes was found to influence the photoresponse in the devices. The obtained results are encouraging and significant for high-temperature applications of β-Ga2O3 MSM deep UV photodetectors.

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