This paper presents the design of a low-power high-CMRR CMOS instrumentation amplifier (IA) aimed for biomedical applications. The amplifier fundamentals were initially presented followed by its main building blocks. Simulation and experimental results were presented and discussed. The IA circuit was designed in AMIS 1.5 µm technology and manufactured through the MOSIS Service. The measured gain,CMRR and power consumption were 65dB, 120dB and 100uW respectively

An instrumentation amplifier based on constant gm, rail-to-rail transconductance amplifiers is presented. The circuit was designed to 0.5,um AMIS C5 CMOS technology. Simulation results show that a -3dB bandwidth about 190 kHz could be obtained. Operating with a 3V supply and its dc gain set to 66 dB, the amplifier has a power consumption of 110,uW, and a CMRR higher than 140dB.I.

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This paper presents the results from an investigation on the implementation of Current Mode Instrumentation Amplifiers (CMIAs) with rail-to-rail operational amplifiers (op amp) with a gm control circuit. The objective of employing rail-to-rail op amps in the implementation of a CMIA is the improvement of the common-mode operation range. The enhancement of the input common mode range (ICMR) is obtained using op amps with a rail-to-rail input stage followed by a cascode-based output stage. A prototype of the CMIA was implemented in standard 0.6 lm XFAB CMOS technology. Test results showed that the CMIA common mode range was extended but with moderated CMRR. To minimize this issue the amplifier was re-designed and sent to fabrication. Simulations with the components variations included were performed and showed the enhancement of the CMRR can be expected.

This paper presents the design and simulation results of a switched-current (SI) MASH 2-2-2 Sigma-Delta Modulator (Σ∆M). The modulator makes use of a low-distortion swing suppression topology which is highly suitable for wideband and high-order modulators. Simulation results reveal that peak signal to noise plus distortion ratio (SNDR) is 83.5 dB at 5 MHz sampling rate with 10 kHz bandwidth. The modulator was designed in a 0.6 µm CMOS technology and the power dissipation is about 45 mW.